Capacidad de alto voltaje 1200V S5560-12M 55A SCR
$1.2500-4999 Piece/Pieces
$0.9≥5000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
Hafen: | SHANGHAI |
$1.2500-4999 Piece/Pieces
$0.9≥5000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
Hafen: | SHANGHAI |
Modelo: YZPST-S5560-12M
Marca: Yzpst
Place Of Origin: China
Tstg: -40 ~ 150℃
Tj: -40~ 125℃
VDRM: 1200/1600V
VRRM: 1200/1600V
VDSM: VDRM +100V
VRSM: VRRM +100V
IT(RMS): 55A
ITSM: 550A
IT(AV): 35A
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. trenza |
Descargar | : |
Control de iluminación y temperatura
ABSOLUTE MAXIMUM RATINGS | ||||
Parameter | Symbol | Value | Unit | |
Storage junction temperature range | Tstg | -40 ~ 150 | ℃ | |
Operating junction temperature range | Tj | -40~ 125 | ℃ | |
Repetitive peak off-state voltage (T =25℃) | VDRM | 1200/1600 | V | |
Repetitive peak reverse voltage (T =25℃) | VRRM | 1200/1600 | V | |
Non repetitive surge peak Off-state voltage | VDSM | VDRM +100 | V | |
Non repetitive peak reverse voltage | VRSM | VRRM +100 | V | |
RMS on-state current | TO-3PIns.(TC=80℃) | IT(RMS) | 55 | A |
TO-247(TC=85℃) | ||||
Non repetitive surge peak on-state current | ITSM | 550 | A | |
Average on-state current (180° conduction angle) | IT(AV) | 35 | A | |
I2t value for fusing (tp= 10ms) | I2t | 1500 | A2 S | |
Critical rate of rise of on-state current | di/dt | 150 | A/μS | |
(I =2×IGT, tr ≤ 100 ns) | ||||
Peak gate current | IGM | 5 | A | |
Average gate power dissipation | PG(AV) | 2 | W |
Thermal Resistances | ||||
Symbol | Parameter | Value | Unit | |
TO-3P | 0.65 | |||
Rth(j-c) | Junction to case (DC) | TO-247 | 0.6 | ℃/W |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) | ||||
Symbol | Test Condition | Value | Unit | |
IGT | V = 12V R = 140Ω | MAX. | 60 | mA |
VGT | MAX. | 1.3 | V | |
VGD | VD=VDRM Tj= 125℃ | MIN. | 0.2 | V |
IL | IG= 1.2IGT | MAX. | 250 | mA |
IH | IT=50mA | MAX. | 200 | mA |
dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 1000 | V/μs |
STATIC CHARACTERISTICS | ||||
Symbol | Parameter | Value(MAX.) | Unit | |
VTM | ITM =80A tp=380μs | Tj =25℃ | 1.8 | V |
IDRM | VD=VDRM VR=VRRM | Tj =25℃ | 20 | μA |
IRRM | Tj =125℃ | 8 | mA |
Datos mecánicos del paquete To-3p
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