Paquete de montaje en superficie 100-8 1A SCRS
$0.0261000-9999 Piece/Pieces
$0.019≥10000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
$0.0261000-9999 Piece/Pieces
$0.019≥10000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Modelo: YZPST-100-8
Marca: Yzpst
Solicitud: No aplica
Tipo De Alimentación: Fabricante original, ODM, Agencia, Detallista
Materiales De Referencia: ficha de datos, Foto, Modelos EDA / CAD
Tipo De Paquete: Montaje superficial
Metodo De Instalacion: No aplica
Función FET: No aplica
Configuración: No aplica
Tstg: -40 ~150°C
Tj: -40 ~125°C
VDRM: 900V
VRRM: 900V
IT(RMS): 1.0A
ITSM: 12A
I2t: 0.72A2S
ABSOLUTE MAXIMUM RATINGS |
|||
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40 ~ 150 |
℃ |
Operating junction temperature range |
Tj |
-40~ 125 |
℃ |
repetitive surge peak Off-state voltage |
VDRM |
900 |
V |
repetitive peak reverse voltage |
VRRM |
900 |
V |
RMS on-state current |
IT(RMS) |
1.0 |
A |
Non repetitive surge peak on-state current ( 180° conduction angle, F=50Hz,t=10ms/60Hz,8 3ms) |
ITSM |
12 |
A |
I2t value for fusing (tp= 10ms) |
I2t |
0.72 |
A2S |
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) |
di/dt |
50 |
A/μS |
Peak gate current |
IGM |
0.5 |
A |
Average gate power dissipation |
PG(AV) |
0.1 |
W |
Maximum device temperature for solderingPurposes (for 10 seconds maximum) |
TL |
260 |
℃ |
ESD level |
HBM |
Class 3 (4000-16000V) |
|
Humidity sensitive level |
MSL |
Three-level (30℃,60%RH,168h) |
|
Thermal Resistances | ||||
Symbol | Parameter | Value | Unit | |
TO-92 | 70 | |||
Rth(j-c) | Junction to tab (DC) | SOT-223 | 25 | ℃/W |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified) | |||||
Symbol | Test Condition | Value | Unit | ||
MlV | TYP | MAX | |||
IGT | V = 12V R = 140Ω | 20 | 40 | 120 | 4A |
VGT | - | - | 1 0 | V | |
VGD | VD=VDRM Tj=125℃ R= 1KΩ | 0.2 | - | - | V |
IL | IG= 1.2IGT | - | - | 6 | mA |
IH | IT=50mA | - | - | 5 | mA |
dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | 50 | - | - | V/ μs |
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