Accionamientos de alta potencia Control de potencia de tiristor 100A

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L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

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Delivery Time:

30 Days

Transportation:

Ocean,Air

Port:

Shanghai

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DDescripción

Product Attributes
Supply Ability & Additional Informations
Embalaje y entrega

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Overview

Product Attributes

Modelo: YZPST-TO94-KP100A06

Marca: YZPST

Supply Ability & Additional Informations

Paquete: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico

productividad: 100

transporte: Ocean,Air

Lugar de origen: China

Capacidad de suministro: 1000

Certificados : ISO9001-2008,ROHS

HS-Code: 85413000

Hafen: Shanghai

Tipo de Pago: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Plazo de entrega: 30 días

Embalaje y entrega

Tipo de paquete:: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico

Tiristor de control de fase

YZPST-TO94-KP100A06

Características del tiristor de control de fase: 1. todo el diseño fundido 2. capacidades de alta corriente 3. capacidades de alta corriente de corriente 4. voltajes de alta velocidad 5. alto DV / DT 6. baja corriente de compuerta 7. puerta dinámica 8. baja impedancia térmica. Las aplicaciones típicas del tiristor de alta potencia es que el módulo tiene unidades de alta potencia, control de motor de CC, fuentes de alimentación de alto voltaje, conmutación de potencia media y fuentes de alimentación de CC.

Calificaciones y características máximas

Symbol	Parameter		Values	Units	Test Conditions
ON-STATE
I_TAV	Mean on-state current		-	A	Sinewave,180° conduction,Tc=100°C
I_TRMS	RMS value of on-state current		100	A	Nominal value
I_TSM	Peak one cycle surge (non repetitive) current		900	A	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 °C
I²t	I square t		4050	A²s	8.3 msec and 10.0 msec
I_L	Latching current		100	mA	V_D = 12 V; R_L= 12 ohms
I_H	Holding current		30	mA	V_D= 12 V; I = 1 A
V_TM	Peak on-state voltage		2.0	V	I_TM = 150 A; Duty cycle £ 0.01%; T_j = 25 °C
di/dt	Critical rate of rise of on-state current	non-repetitive	300	A/ms	Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM
di/dt	Critical rate of rise of on-state current	repetitive	50	A/ms
BLOCKING
V_DRM V_RRM	Repetitive peak off state voltage Repetitive peak reverse voltage		600	V
V_DSM V_RSM	Non repetitive peak off state voltage Non repetitive peak reverse voltage		700	V
I_DRM I_RRM	Repetitive peak off state current Repetitive peak reverse current		10	mA	T_j = 125 °C ,V_RRM V_DRMapplied
dV/dt	Critical rate of voltage rise		100	V/ms	T_J=T_Jmax, linear to 80% rated V_DRM
TRIGGEING
P_G(AV)	Average gate power dissipation		-	W
P_GM	Peak gate power dissipation		-	W
I_GM	Peak gate current		-	A
I_GT	Gate trigger current		200	mA	T_C = 25 °C
V_GT	Gate trigger voltage		3.0	V	T_C = 25 °C
V_T(T0)	Treshold voltage		1	V
r_T	Slope resistance		2.4	mΩ
V_GD	Gate non-trigger voltage		0.2	V	T_j = 125 °C
SWITCHING
t_q	Turn-off time		-	ms	T_j = 125 °C
t_d	Delay time		-	ms	Gate current 1A, di/dt=1A/μs, V_d=0.67%V_DRM, T_J=25°C
Q_rr	Reverse recovery charge		-

Térmico y mecánico

Symbol	Parameter	Values	Units	Test Conditions
T_j	Operating temperature	-40~125	°C
T_stg	Storage temperature	-40~150	°C
R_{th (j-c)}	Thermal resistance - junction to case	0.4	°C/W	DC operation ,Single sided cooled
R_{th (c-s)}	Thermal resistance - case to sink	0.08	°C/W	Single sided cooled
P	Mounting force	-	Nm
W	Weight	-	g	about