YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Inicio> Lista de Productos> Paquete de plástico semiconductor> Rectificador controlado por silicio (SCR)> NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T
NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T
NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T
NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T
NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T
NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T

NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Tipo de Pago:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
transporte:Ocean,Air
Hafen:SHANGHAI
Atributos del producto

ModeloYZPST-MJE2955T

MarcaYzpst

VCBO-70V

VCEO-60V

VEBO-5V

IC-10A

PTOT75W

Tj150℃

Tstg-55-150℃

Embalaje y entrega
Unidades de venta : Piece/Pieces
Tipo de paquete : 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje de protección de plástico
Descargar :
YZPST-MJE2955T NPN Silicon Power Transistors MJE29
Descripción


PNP Silicon Power Transistors MJE2955T

Description:
El MJE2955T es un transistor PNP, que es complementario a MJE3055T y se usa en circuitos de amplificación de potencia de audio y conversión de potencia.

Formulario de paquete: To-220

TO220 Silicon Power Transistors MJE2955T

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Continuous Collector Current

-10

A

PTOT

Total dissipation at Tcase=25 ℃

75

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150




Características eléctricas (TC = 25 ° C, a menos que lo contrario especificado)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

VCBO

Collector-Base Breakdown Voltage

IC= -10mA

-70

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= -200mA

-60

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IE= -10mA

- 5

 

 

V

ICBO

Collector Cutoff Current

VCB= -70V

 

 

1

mA

IEBO

Emitter Cutoff Current

VEB= -5V

 

 

5

mA

hFE

DC Current Gain

IC= -4A,VCE= -4V

20

 

100

 

VCE(sat)

Collector-Base Breakdown Voltage

IC= -4A,IB= -0.4A

 

 

-1.1

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -4A,IB= -4A

 

 

-1.8

V

fT

Transition Frequency

VCE=10V, IC=0.5A f=1MHZ

2

 

 

MHZ

aPulse Testtp ≤300usδ≤2%

Paquete mecánico DATOS

MJE2955T Complementary to MJE3055T TO220


Inicio> Lista de Productos> Paquete de plástico semiconductor> Rectificador controlado por silicio (SCR)> NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T
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