25TTS12 semiconductores control de fase scr 1200V

Precio unitario:

USD 0.22 - 0.25 / Piece/Pieces

Tipo de Pago:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Cantidad de pedido mínima:

2000 Piece/Pieces

Plazo de entrega:

30 días

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Información básica

Modelo: YZPST-25TTS12-1

Información adicional

Paquete: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico

productividad: 10000

Marca: YZPST

transporte: Ocean,Air

Lugar de origen: China

Capacidad de suministro: 100000

Certificados : ISO9001-2015,ROHS

Hafen: SHANGHAI

DDescripción

Control de fase SCR, 25 A

DESCRIPCION / CARACTERISTICAS

Los rectificadores controlados por silicio de la serie de alto voltaje 25TTS ... están diseñados específicamente para aplicaciones de conmutación de potencia media y control de fase. La tecnología de pasivación de vidrio utilizada tiene un funcionamiento confiable hasta

Temperatura de unión de 125 ° C.

Las aplicaciones típicas se encuentran en la rectificación de entrada (inicio suave) y estos productos están diseñados para ser utilizados con diodos de entrada HPP de Vishay, interruptores y rectificadores de salida que están disponibles en contornos de paquetes idénticos.

Este producto ha sido diseñado y calificado para nivel industrial.

PRODUCT SUMMARY
VT at 16 A	< 1.25 V
ITSM	300 A
VRRM	800/1200 V

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS
PARAMETER	TEST CONDITIONS	VALUES	UNITS
IT(AV)	Sinusoidal waveform	16	A
IRMS		25	A
VRRM/VDRM		800/1200	V
ITSM		300	A
VT	16 A, TJ = 25 °C	1.25	V
dV/dt		500	V/µs
dI/dt		150	A/µs
TJ		- 40 to 125	°C

VOLTAGE RATINGS
PART NUMBER	VRRM, MAXIMUM PEAK REVERSE VOLTAGE V	VDRM, MAXIMUM PEAK DIRECT VOLTAGE V	IRRM/IDRM AT 125 °C mA
25TTS08	800	800	10
25TTS12	1200	1200	10

ABSOLUTE MAXIMUM RATINGS
PARAMETER	SYMBOL	TEST CONDITIONS		VALUES		UNITS
				TYP.	MAX.
Maximum average on-state current	IT(AV)	TC = 93 °C, 180° conduction half sine wave		16		A
Maximum RMS on-state current	IRMS			25
Maximum peak, one-cycle, non-repetitive surge current	ITSM	10 ms sine pulse, rated VRRM applied		300
		10 ms sine pulse, no voltage reapplied		350
Maximum I2t for fusing	I2t	10 ms sine pulse, rated VRRM applied		450		A2s
		10 ms sine pulse, no voltage reapplied		630
Maximum I2√t for fusing	I2√t	t = 0.1 to 10 ms, no voltage reapplied		6300		A2√s
Maximum on-state voltage drop	VTM	16 A, TJ = 25 °C		1.25		V
On-state slope resistance	rt	TJ = 125 °C		12.0		mΩ
Threshold voltage	VT(TO)			1.0		V
Maximum reverse and direct leakage current	IRM/IDM	TJ = 25 °C	VR = Rated VRRM/VDRM	0.5		mA
		TJ = 125 °C		10
Holding current	IH	Anode supply = 6 V, resistive load, initial IT = 1 A		-	100
Maximum latching current	IL	Anode supply = 6 V, resistive load		200
Maximum rate of rise of off-state voltage	dV/dt			500		V/µs
Maximum rate of rise of turned-on current	dI/dt			150		A/µs

TRIGGERING
PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
Maximum peak gate power	PGM		8.0	W
Maximum average gate power	PG(AV)		2.0	W
Maximum peak positive gate current	+ IGM		1.5	A
Maximum peak negative gate voltage	- VGM		10	V
Maximum required DC gate current to trigger	IGT	Anode supply = 6 V, resistive load, TJ = - 10 °C	60	mA
		Anode supply = 6 V, resistive load, TJ = 25 °C	45
		Anode supply = 6 V, resistive load, TJ = 125 °C	20
Maximum required DC gate voltage to trigger	VGT	Anode supply = 6 V, resistive load, TJ = - 10 °C	2.5	V
		Anode supply = 6 V, resistive load, TJ = 25 °C	2.0
		Anode supply = 6 V, resistive load, TJ = 125 °C	1.0
Maximum DC gate voltage not to trigger	VGD	TJ = 125 °C, VDRM = Rated value	0.25
Maximum DC gate current not to trigger	IGD	TJ = 125 °C, VDRM = Rated value	2.0	mA

SWITCHING
PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
Typical turn-on time	tgt	TJ = 25 °C	0.9	µs
Typical reverse recovery time	trr	TJ = 125 °C	4
Typical turn-off time	tq	TJ = 125 °C	110

THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL	TEST CONDITIONS	VALUES	UNITS
Maximum junction and storage temperature range		TJ, TStg		- 40 to 125	°C
Maximum thermal resistance, junction to case		RthJC	DC operation	1.1	°C/W
Maximum thermal resistance, junction to ambient		RthJA		62
Typical thermal resistance, case to heatsink		RthCS	Mounting surface, smooth and greased	0.5
Approximate weight				2	g
				0.07	oz.
Mounting torque	minimum			6 (5)	kgf · cm (lbf · in)
	maximum			12 (10)
Marking device			Case style TO-220AB	25TTS08
				25TTS12