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Home > Lista de Productos > Paquete de plástico semiconductor > Rectificador controlado de silicio (SCR) > 25TTS12 semiconductores control de fase scr 1200V
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| Precio unitario: | USD 0.22 - 0.25 / Piece/Pieces |
|---|---|
| Tipo de Pago: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Cantidad de pedido mínima: | 2000 Piece/Pieces |
| Plazo de entrega: | 30 días |
Información básica
Modelo: YZPST-25TTS12-1
Información adicional
Paquete: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico
productividad: 10000
Marca: YZPST
transporte: Ocean,Air
Lugar de origen: China
Capacidad de suministro: 100000
Certificados : ISO9001-2015,ROHS
Hafen: SHANGHAI
DDescripción
Control de fase SCR, 25 A
DESCRIPCION / CARACTERISTICAS
Los rectificadores controlados por silicio de la serie de alto voltaje 25TTS ... están diseñados específicamente para aplicaciones de conmutación de potencia media y control de fase. La tecnología de pasivación de vidrio utilizada tiene un funcionamiento confiable hasta
Temperatura de unión de 125 ° C.
Las aplicaciones típicas se encuentran en la rectificación de entrada (inicio suave) y estos productos están diseñados para ser utilizados con diodos de entrada HPP de Vishay, interruptores y rectificadores de salida que están disponibles en contornos de paquetes idénticos.
Este producto ha sido diseñado y calificado para nivel industrial.
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PRODUCT SUMMARY |
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VT at 16 A |
< 1.25 V |
|
ITSM |
300 A |
|
VRRM |
800/1200 V |
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OUTPUT CURRENT IN TYPICAL APPLICATIONS |
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APPLICATIONS |
SINGLE-PHASE BRIDGE |
THREE-PHASE BRIDGE |
UNITS |
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Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W |
18 |
22 |
A |
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MAJOR RATINGS AND CHARACTERISTICS |
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PARAMETER |
TEST CONDITIONS |
VALUES |
UNITS |
|
IT(AV) |
Sinusoidal waveform |
16 |
A |
|
IRMS |
|
25 |
|
|
VRRM/VDRM |
|
800/1200 |
V |
|
ITSM |
|
300 |
A |
|
VT |
16 A, TJ = 25 °C |
1.25 |
V |
|
dV/dt |
|
500 |
V/µs |
|
dI/dt |
|
150 |
A/µs |
|
TJ |
|
- 40 to 125 |
°C |
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VOLTAGE RATINGS |
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PART NUMBER |
VRRM, MAXIMUM PEAK REVERSE VOLTAGE V |
VDRM, MAXIMUM PEAK DIRECT VOLTAGE V |
IRRM/IDRM AT 125 °C mA |
|
25TTS08 |
800 |
800 |
10 |
|
25TTS12 |
1200 |
1200 |
|
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ABSOLUTE MAXIMUM RATINGS |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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TYP. |
MAX. |
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Maximum average on-state current |
IT(AV) |
TC = 93 °C, 180° conduction half sine wave |
16 |
A |
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Maximum RMS on-state current |
IRMS |
|
25 |
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Maximum peak, one-cycle, non-repetitive surge current |
ITSM |
10 ms sine pulse, rated VRRM applied |
300 |
|||
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10 ms sine pulse, no voltage reapplied |
350 |
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Maximum I2t for fusing |
I2t |
10 ms sine pulse, rated VRRM applied |
450 |
A2s |
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10 ms sine pulse, no voltage reapplied |
630 |
|||||
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Maximum I2√t for fusing |
I2√t |
t = 0.1 to 10 ms, no voltage reapplied |
6300 |
A2√s |
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Maximum on-state voltage drop |
VTM |
16 A, TJ = 25 °C |
1.25 |
V |
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On-state slope resistance |
rt |
TJ = 125 °C |
12.0 |
mΩ |
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Threshold voltage |
VT(TO) |
1.0 |
V |
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Maximum reverse and direct leakage current |
IRM/IDM |
TJ = 25 °C |
VR = Rated VRRM/VDRM |
0.5 |
mA |
|
|
TJ = 125 °C |
10 |
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Holding current |
IH |
Anode supply = 6 V, resistive load, initial IT = 1 A |
- |
100 |
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Maximum latching current |
IL |
Anode supply = 6 V, resistive load |
200 |
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Maximum rate of rise of off-state voltage |
dV/dt |
|
500 |
V/µs |
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Maximum rate of rise of turned-on current |
dI/dt |
|
150 |
A/µs |
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TRIGGERING |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
|
Maximum peak gate power |
PGM |
|
8.0 |
W |
|
Maximum average gate power |
PG(AV) |
|
2.0 |
|
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Maximum peak positive gate current |
+ IGM |
|
1.5 |
A |
|
Maximum peak negative gate voltage |
- VGM |
|
10 |
V |
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Maximum required DC gate current to trigger |
IGT |
Anode supply = 6 V, resistive load, TJ = - 10 °C |
60 |
mA |
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Anode supply = 6 V, resistive load, TJ = 25 °C |
45 |
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Anode supply = 6 V, resistive load, TJ = 125 °C |
20 |
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Maximum required DC gate voltage to trigger |
VGT |
Anode supply = 6 V, resistive load, TJ = - 10 °C |
2.5 |
V |
|
Anode supply = 6 V, resistive load, TJ = 25 °C |
2.0 |
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Anode supply = 6 V, resistive load, TJ = 125 °C |
1.0 |
|||
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Maximum DC gate voltage not to trigger |
VGD |
TJ = 125 °C, VDRM = Rated value |
0.25 |
|
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Maximum DC gate current not to trigger |
IGD |
2.0 |
mA |
|
|
SWITCHING |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
|
Typical turn-on time |
tgt |
TJ = 25 °C |
0.9 |
µs |
|
Typical reverse recovery time |
trr |
TJ = 125 °C |
4 |
|
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Typical turn-off time |
tq |
110 |
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THERMAL AND MECHANICAL SPECIFICATIONS |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum junction and storage temperature range |
TJ, TStg |
|
- 40 to 125 |
°C |
|
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Maximum thermal resistance, junction to case |
RthJC |
DC operation |
1.1 |
°C/W |
|
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Maximum thermal resistance, junction to ambient |
RthJA |
|
62 |
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Typical thermal resistance, case to heatsink |
RthCS |
Mounting surface, smooth and greased |
0.5 |
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Approximate weight |
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|
2 |
g |
|
|
0.07 |
oz. |
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Mounting torque |
minimum |
|
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6 (5) |
kgf · cm (lbf · in) |
|
maximum |
|
|
12 (10) |
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Marking device |
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Case style TO-220AB |
25TTS08 |
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25TTS12 |
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PRODUCTOS POR GRUPO : Paquete de plástico semiconductor > Rectificador controlado de silicio (SCR)
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Número de Teléfono:86-514-87782298
Fax:86-514-87782297
Móvil:+8613805278321
Email:info@yzpst.com
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu
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