Tiristores de control rápido Scr DCR604

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Incoterm:	FOB,CFR,CIF
Plazo de entrega:	30 días

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Información básica

Modelo: YZPST-DCR604

Información adicional

Marca: YZPST

transporte: Ocean,Air

Certificados : ISO9000

Hafen: SHANGHAI

DDescripción

Control de fase de tiristor de alta potencia

YZPST-DCR604

TIRISTOR DE ALTA POTENCIA DCR604SE2121 PARA APLICACIONES DE CONTROL DE FASE

Características: toda la estructura difusa . Configuración de compuerta amplificadora central . Capacidad de bloqueo hasta 2000 voltios . Tiempo máximo garantizado de apagado . Alta capacidad dV / dt . Dispositivo ensamblado a presión

High Power Thyristor Phase Control

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		600		A	Sinewave,180^o conduction,T_c =65^oC
RMS value of on-state current	I_TRMS		940		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		7500 7200		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		235000		A²s	8.3 msec and 10.0 msec
Latching current	I_L		800		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		400		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		2.30		V	I_TM = 2000 A; Duty cPSTCle £ 0.01%
Critical rate of rise of on-state current (5, 6)	di/dt		400		A/ms	Switching from V_DRM£ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		150		A/ms	Switching from V_DRM£ 1000 V

CARACTERÍSTICAS ELÉCTRICAS Y CLASIFICACIONES (cont`d)

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		10		A
Gate current required to trigger all units	I_GT		300 150 125		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.15	5 3		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dinámica

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.5	0.7	ms	I_TM = 50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		200	125	ms	I_TM = 500 A; di/dt = 25 A/ms; V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*		mC	I_TM = 500 A; di/dt = 25 A/ms; V_R³ -50 V

* Para un máximo garantizado valor, póngase en contacto con la fábrica.

CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)	0.045 (1)	0.055 (2)		^oC/W	Double sided cooled * (1) @ 2000 lb.; (2) @ 800 lb.
Thermal resistamce - junction to case	R_Q_(j-c)	0.090 (1)	0.110 (2)		^oC/W	Single sided cooled * (1) @ 2000 lb.; (2) @ 800 lb.
Thermal resistance - case to sink	R_Q_(c-s)		.030 .060		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	3.6	11.1		kN
Weight	W			70	g