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YANGZHOU POSITIONING TECH CO., LTD.
Lista de Productos
Modelo: YZPST-DCR604
Marca: YZPST
transporte: Ocean,Air
Certificados : ISO9000
Hafen: SHANGHAI
Tipo de Pago: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Plazo de entrega: 30 días
Control de fase de tiristor de alta potencia
YZPST-DCR604
TIRISTOR DE ALTA POTENCIA DCR604SE2121 PARA APLICACIONES DE CONTROL DE FASE
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
600 |
|
A |
Sinewave,180o conduction,Tc =65oC |
|
RMS value of on-state current |
ITRMS |
|
940 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
7500
7200 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
235000 |
|
A2s |
8.3 msec and 10.0 msec |
|
Latching current |
IL |
|
800 |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
400 |
|
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
2.30 |
|
V |
ITM = 2000 A; Duty cPSTCle £ 0.01%
|
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
400 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
150 |
|
A/ms |
Switching from VDRM£ 1000 V |
CARACTERÍSTICAS ELÉCTRICAS Y CLASIFICACIONES (cont`d)
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
10 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 150 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units
|
VGT |
0.15 |
5 3
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
Dinámica
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
1.5 |
0.7 |
ms |
ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
|
Turn-off time (with VR = -50 V) |
tq |
|
200
|
125 |
ms |
ITM = 500 A; di/dt = 25 A/ms; VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
|
Reverse recovery charge |
Qrr |
|
* |
|
mC |
ITM = 500 A; di/dt = 25 A/ms; VR³ -50 V |
* Para un máximo garantizado valor, póngase en contacto con la fábrica.
CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c)
|
0.045 (1) |
0.055 (2) |
|
oC/W |
Double sided cooled * (1) @ 2000 lb.; (2) @ 800 lb. |
|
Thermal resistamce - junction to case |
RQ (j-c) |
0.090 (1) |
0.110 (2) |
|
oC/W |
Single sided cooled * (1) @ 2000 lb.; (2) @ 800 lb. |
|
Thermal resistance - case to sink |
RQ (c-s) |
|
.030 .060 |
|
oC/W |
Double sided cooled * Single sided cooled * |
|
Mounting force |
P |
3.6 |
11.1 |
|
kN |
|
|
Weight |
W |
|
|
70 |
g |
|
CONTORNO
PRODUCTOS POR GRUPO : Dispositivos de disco semiconductor (tipo cápsula) > Tiristor de control de fase
Realizar consulta
Mr. John chang
Número de Teléfono:86-514-87782298
Fax:86-514-87782297
Móvil:+8613805278321
Email:info@yzpst.com
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu
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