Encendedor electronico 30V Mosfet 80N03

Precio unitario:

USD 0.23 / Piece/Pieces

Tipo de Pago:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Cantidad de pedido mínima:

1000 Piece/Pieces

Plazo de entrega:

30 días

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Información básica

Modelo: YZPST-80N03

Información adicional

Paquete: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico

productividad: 100

Marca: YZPST

transporte: Ocean,Air

Lugar de origen: China

Capacidad de suministro: 500

Certificados : ISO9001-2008,ROHS

HS-Code: 85413000

Hafen: Shanghai

DDescripción

Encendedor de cigarrillos electronico Mosfet

YZPST-80N03

VDSS 30V RDS(ON) 4mΩ(max.)@ VGS=10V RDS(ON) 6mΩ(max.)@ VGS=4.5V ID 100A
Description	DFN5X6-8L
YZPST 80N03 uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Applications	Features
￭ Lithium-Ion Secondary Batteries ￭ Load Switch ￭ DC-DC converters and Off-line UPS	￭ Low On-Resistance ￭ Low Input Capacitance ￭ Low Miller Charge ￭ Low Input / Output Leakage

Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDSS	30V	V
Gate-Source Voltage	VGSS	±20V	V
Drain Current-Continuous @ TC=25℃ NOTE1, 6	ID	100	A
Drain Current-Continuous @ TC=100℃ NOTE1, 6	ID	80	A
Drain Current-Continuous @ TA=25℃ NOTE1	ID	20	A
Drain Current-Continuous @ TA=100℃ NOTE1	ID	15	A
Drain Current-Pulsed NOTE 2	IDM	216	A
Avalanche Current	IAS	53.8	A
Avalanche Energy NOTE 3	EAS	144.7	mJ
Maximum Power Dissipation @ TC=25℃ NOTE4	PD	69	W
Maximum Power Dissipation @ TA=25℃ NOTE4	PD	2	W
Storage Temperature Range	TSTG	-55 to 150°C	°C
Operating Junction Temperature Range	TJ	-55 to 150°C	°C

Thermal Resistance Ratings
Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Maximum Junction-to-Ambient NOTE1	RθJA	Steady State	-	-	62	°C/W
Maximum Junction-to-Case NOTE1	RθJC	Steady State	-	-	1.8	°C/W

Electrical Characteristics(TJ=25°C unless otherwise noted)
Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , IDS=250uA	30	-	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=24V, VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=±20V , VDS=0V	-	-	±100	nA
ON CHARACTERISTICS
Gate Threshold Voltage	VGS(TH)	VGS=VDS, IDS=250uA	1.2	-	2.5	V
Drain-Source On-Resistance NOTE2	RDS(ON)	VGS=10V , IDS=30A	-	-	4	mΩ
Drain-Source On-Resistance NOTE2	RDS(ON)	VGS=4.5V , IDS=20A	-	-	6	mΩ
Forward Transconductance	gfs	VDS=5V , ID=30A	-	26.5	-	S
Gate Resistance	Rg	VDS=0V , VGS=0V , f=1MHz	-	1.4	-	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance	Ciss	VDS=15V, VGS=0V, f=1MHz	-	3080	-	pF
Output Capacitance	Coss		-	410	-
Reverse Transfer Capacitance	Crss		-	316	-
SWITCHING CHARACTERISTICS
Turn-On Delay Time	Td(on)	VDS=15V, VGS=10V, ID=15A , RGEM=3.3Ω	-	9.6	-	ns
Rise Time	tr		-	20.8	-
Turn-Off Delay Time	Td(off)		-	58	-
Fall Time	tf		-	16	-
Total Gate Charge at 4.5V	Qg	VDS=15V, IDS=15A, VGS=4.5V	-	32	-	nC
Gate to Source Gate Charge	Qgs		-	9.1	-
Gate to Drain "Miller" Charge	Qgd		-	12.2	-
SWITCHING CHARACTERISTICS
Drain-Source Diode Forward Voltage 2	VSD	VGS=0V, IS=1A	-	-	1.0	V
Continuous Source Current NOTE1, 5	IS	VG=VD=0V , Force Current	-	-	100	A
Pulsed Source Current NOTE2,5	ISM	VG=VD=0V , Force Current	-	-	216	A