Lista de Productos
Home > Lista de Productos > Paquete de plástico semiconductor > Transistor de silicio > Transistor de potencia de bajo voltaje de uso general BD139
PRODUCT CATEGORIES
Tipo de Pago: | L/C,T/T,Paypal |
---|---|
Incoterm: | FOB,CFR,CIF |
Plazo de entrega: | 30 días |
Información básica
Modelo: YZPST-BD139
Información adicional
productividad: 1000
Marca: YZPST
transporte: Ocean,Air
Lugar de origen: China
Capacidad de suministro: 10000
Certificados : ISO9001-2008,ROHS
HS-Code: 85413000
Hafen: SHANGHAI
DDescripción
Transistor de baja tensión complementario
YZPST-BD139
Caracteristicas
■ Los productos son preseleccionados en ganancia de corriente continua.
Solicitud
■ propósito general
Descripción
Estos transistores planares epitaxiales se montan en el paquete de plástico SOT-32. Están diseñados para amplificadores de audio y controladores que utilizan circuitos complementarios o casi complementarios. Los tipos NPN son BD135 y BD139, y los tipos PNP complementarios son BD136 y BD140.
T a b le 1 . D e v i c e s ummary
Order codes |
Marking |
Package |
Packaging |
BD135 |
BD135 |
SOT-32 |
Tube |
BD135-16 |
BD135-16 |
||
BD136 |
BD136 |
||
BD136-16 |
BD136-16 |
||
BD139 |
BD139 |
||
BD139-10 |
BD139-10 |
||
BD139-16 |
BD139-16 |
||
BD140 |
BD140 |
||
BD140-10 |
BD140-10 |
||
BD140-16 |
BD140-16 |
T a b le 2. Máximas calificaciones absolutas
Symbol |
Parameter |
Value |
Unit |
|||
NPN |
PNP |
|||||
BD135 |
BD139 |
BD136 |
BD140 |
|||
VCBO |
Collector-base voltage (IE = 0) |
45 |
80 |
-45 |
-80 |
V |
VCEO |
Collector-emitter voltage (IB = 0) |
45 |
80 |
-45 |
-80 |
V |
VEBO |
Emitter-base voltage (IC = 0) |
5 |
-5 |
V |
||
IC |
Collector current |
1.5 |
-1.5 |
A |
||
ICM |
Collector peak current |
3 |
-3 |
A |
||
IB |
Base current |
0.5 |
-0.5 |
A |
||
PTOT |
Total dissipation at Tc ≤ 25 °C |
12.5 |
W |
|||
PTOT |
Total dissipation at Tamb ≤ 25 °C |
1.25 |
W |
|||
Tstg |
Storage temperature |
-65 to 150 |
°C |
|||
Tj |
Max. operating junction temperature |
150 |
°C |
T a b le 3. Datos térmicos
Symbol |
Parameter |
Max value |
Unit |
Rthj-case |
Thermal resistance junction-case |
10 |
°C/W |
Rthj-amb |
Thermal resistance junction-ambient |
100 |
°C/W |
|
T a b le 4. Estados on / off
Symbol |
Parameter |
Polarity |
Test conditions |
Value |
Unit |
||
Min. |
Typ. |
Max. |
|||||
ICBO |
Collector cut-off current (I =0) |
NPN |
VCB = 30 V VCB = 30 V, TC = 125 °C |
|
|
0.1 10 |
µA µA |
PNP |
VCB = -30 V VCB = -30 V, TC = 125 °C |
|
|
-0.1 -10 |
µA µA |
||
IEBO |
Emitter cut-off current (I =0) |
NPN |
VEB = 5 V |
|
|
10 |
µA |
PNP |
VEB = -5 V |
|
|
-10 |
µA |
||
VCEO(sus)(1) |
Collector-emitter sustaining voltage (IB=0) |
NPN |
IC = 30 mA BD135 BD139 |
45 80 |
|
|
V V |
PNP |
IC = -30 mA BD136 BD140 |
-45 -80 |
|
|
V V |
||
VCE(sat) (1) |
Collector-emitter saturation voltage |
NPN |
IC = 0.5 A, IB = 0.05 A |
|
|
0.5 |
V |
PNP |
IC = -0.5 A, IB = -0.05 A |
|
|
-0.5 |
V |
||
VBE (1) |
Base-emitter voltage |
NPN |
IC = 0.5 A, VCE = 2 V |
|
|
1 |
V |
PNP |
IC = -0.5 A, VCE = -2 V |
|
|
-1 |
V |
||
hFE (1) |
DC current gain |
NPN |
IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V |
25 40 25 |
|
250 |
|
PNP |
IC = -5 mA, VCE = -2 V IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V |
25 40 25 |
|
250 |
|
||
hFE (1) |
hFE groups |
NPN |
IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16 |
63 100 |
|
160 250 |
|
PNP |
IC = -150 mA, VCE = -2 V BD140-10 BD136-16/BD140-16 |
63 100 |
|
160 250 |
|
PRODUCTOS POR GRUPO : Paquete de plástico semiconductor > Transistor de silicio
Productos hot
Realizar consulta
Mr. John chang
Número de Teléfono:86-514-87782298
Fax:86-514-87782297
Móvil:+8613805278321
Email:info@yzpst.com
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu
Lista de productos relacionados
Sitio movil