Transistor de baja tensión complementario
YZPST-BD139
Caracteristicas
■ Los productos son preseleccionados en ganancia de corriente continua.
Solicitud
■ propósito general
Descripción
Estos transistores planares epitaxiales se montan en el paquete de plástico SOT-32. Están diseñados para amplificadores de audio y controladores que utilizan circuitos complementarios o casi complementarios. Los tipos NPN son BD135 y BD139, y los tipos PNP complementarios son BD136 y BD140.
T a b le 1 . D e v i c e s ummary
|
Order codes
|
Marking
|
Package
|
Packaging
|
|
BD135
|
BD135
|
SOT-32
|
Tube
|
|
BD135-16
|
BD135-16
|
|
BD136
|
BD136
|
|
BD136-16
|
BD136-16
|
|
BD139
|
BD139
|
|
BD139-10
|
BD139-10
|
|
BD139-16
|
BD139-16
|
|
BD140
|
BD140
|
|
BD140-10
|
BD140-10
|
|
BD140-16
|
BD140-16
|
T a b le 2. Máximas calificaciones absolutas
|
Symbol
|
Parameter
|
Value
|
Unit
|
|
NPN
|
PNP
|
|
BD135
|
BD139
|
BD136
|
BD140
|
|
VCBO
|
Collector-base voltage (IE = 0)
|
45
|
80
|
-45
|
-80
|
V
|
|
VCEO
|
Collector-emitter voltage (IB = 0)
|
45
|
80
|
-45
|
-80
|
V
|
|
VEBO
|
Emitter-base voltage (IC = 0)
|
5
|
-5
|
V
|
|
IC
|
Collector
current
|
1.5
|
-1.5
|
A
|
|
ICM
|
Collector peak current
|
3
|
-3
|
A
|
|
IB
|
Base current
|
0.5
|
-0.5
|
A
|
|
PTOT
|
Total dissipation
at Tc ≤ 25
°C
|
12.5
|
W
|
|
PTOT
|
Total dissipation
at Tamb ≤ 25 °C
|
1.25
|
W
|
|
Tstg
|
Storage temperature
|
-65 to 150
|
°C
|
|
Tj
|
Max. operating junction temperature
|
150
|
°C
|
T a b le 3. Datos térmicos
|
Symbol
|
Parameter
|
Max value
|
Unit
|
|
Rthj-case
|
Thermal
resistance junction-case
|
10
|
°C/W
|
|
Rthj-amb
|
Thermal
resistance junction-ambient
|
100
|
°C/W
|
|
Symbol
|
Parameter
|
Polarity
|
Test conditions
|
Value
|
Unit
|
|
Min.
|
Typ.
|
Max.
|
|
ICBO
|
Collector cut-off current (I =0)
|
NPN
|
VCB = 30 V
VCB = 30 V, TC = 125 °C
|
|
|
0.1
10
|
µA
µA
|
|
PNP
|
VCB = -30 V
VCB = -30 V,
TC = 125 °C
|
|
|
-0.1
-10
|
µA
µA
|
|
IEBO
|
Emitter cut-off current
(I =0)
|
NPN
|
VEB = 5 V
|
|
|
10
|
µA
|
|
PNP
|
VEB = -5 V
|
|
|
-10
|
µA
|
|
VCEO(sus)(1)
|
Collector-emitter sustaining voltage (IB=0)
|
NPN
|
IC = 30 mA BD135
BD139
|
45
80
|
|
|
V V
|
|
PNP
|
IC = -30 mA
BD136
BD140
|
-45
-80
|
|
|
V V
|
|
VCE(sat) (1)
|
Collector-emitter saturation voltage
|
NPN
|
IC = 0.5 A, IB = 0.05
A
|
|
|
0.5
|
V
|
|
PNP
|
IC = -0.5 A, IB = -0.05 A
|
|
|
-0.5
|
V
|
|
VBE (1)
|
Base-emitter voltage
|
NPN
|
IC = 0.5 A, VCE = 2 V
|
|
|
1
|
V
|
|
PNP
|
IC = -0.5 A, VCE = -2 V
|
|
|
-1
|
V
|
|
hFE (1)
|
DC current gain
|
NPN
|
IC = 5 mA, VCE = 2 V
IC = 150
mA, VCE = 2
V IC = 0.5 A, VCE = 2 V
|
25
40
25
|
|
250
|
|
|
PNP
|
IC = -5 mA, VCE = -2 V
IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V
|
25
40
25
|
|
250
|
|
|
hFE (1)
|
hFE groups
|
NPN
|
IC = 150
mA, VCE = 2
V BD139-10
BD135-16/BD139-16
|
63
100
|
|
160
250
|
|
|
PNP
|
IC = -150 mA, VCE = -2 V BD140-10
BD136-16/BD140-16
|
63
100
|
|
160
250
|
|
|
|
T a b le 4. Estados on / off
|
Symbol
|
Parameter
|
Polarity
|
Test conditions
|
Value
|
Unit
|
|
Min.
|
Typ.
|
Max.
|
|
ICBO
|
Collector cut-off current (I =0)
|
NPN
|
VCB = 30 V
VCB = 30 V, TC = 125 °C
|
|
|
0.1
10
|
µA
µA
|
|
PNP
|
VCB = -30 V
VCB = -30 V, TC = 125 °C
|
|
|
-0.1
-10
|
µA
µA
|
|
IEBO
|
Emitter cut-off current
(I =0)
|
NPN
|
VEB = 5 V
|
|
|
10
|
µA
|
|
PNP
|
VEB = -5 V
|
|
|
-10
|
µA
|
|
VCEO(sus)(1)
|
Collector-emitter sustaining voltage (IB=0)
|
NPN
|
IC = 30 mA BD135
BD139
|
45
80
|
|
|
V V
|
|
PNP
|
IC = -30 mA
BD136
BD140
|
-45
-80
|
|
|
V V
|
|
VCE(sat) (1)
|
Collector-emitter saturation voltage
|
NPN
|
IC = 0.5 A, IB = 0.05 A
|
|
|
0.5
|
V
|
|
PNP
|
IC = -0.5 A, IB = -0.05 A
|
|
|
-0.5
|
V
|
|
VBE (1)
|
Base-emitter voltage
|
NPN
|
IC = 0.5 A, VCE = 2 V
|
|
|
1
|
V
|
|
PNP
|
IC = -0.5 A, VCE = -2 V
|
|
|
-1
|
V
|
|
hFE (1)
|
DC current gain
|
NPN
|
IC = 5 mA, VCE = 2 V
IC = 150
mA, VCE = 2
V IC = 0.5 A, VCE = 2 V
|
25
40
25
|
|
250
|
|
|
PNP
|
IC = -5 mA, VCE = -2 V
IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V
|
25
40
25
|
|
250
|
|
|
hFE (1)
|
hFE groups
|
NPN
|
IC = 150
mA, VCE = 2
V BD139-10
BD135-16/BD139-16
|
63
100
|
|
160
250
|
|
|
PNP
|
IC = -150 mA, VCE = -2 V BD140-10
BD136-16/BD140-16
|
63
100
|
|
160
250
|
|
PRODUCTOS POR GRUPO : Paquete de plástico semiconductor > Transistor de silicio
