Transistor de potencia Rf TO-3 npn transistor de silicio
Obtener el último precioTipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | SHANGHAI |
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | SHANGHAI |
Modelo: YZPST-2N6576
Marca: YZPST
Transistores de Darlington del poder del silicio de NPN
YZPST-2N6576
Transistores de CARACTERÍSTICAS: 1.High Gain Darlington Performance 2. Protección de diodo incorporada para la protección de polaridad inversa
3. Puede ser conducido desde la lógica de bajo nivel 4. Rango de voltaje popular
A B S O L U T E M A X I M U M R A T I N G S ( T a = 2 5 O C)
Parameter |
Symbol |
Value |
Unit |
Collector-Base Voltage |
VCBO |
60 |
V |
Collector-Emitter Voltage |
VCEO |
60 |
V |
Emitter-Base Voltage |
VEBO |
6.0 |
V |
Collector Current |
IC |
15 |
A |
Base Current |
IB |
0.5 |
A |
Total Dissipation at |
Ptot |
120 |
W |
Max. Operating Junction Temperature |
Tj |
120 |
oC |
Storage Temperature |
Tstg |
-55~150 |
oC |
Parameter |
Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
Collector Cut-off Current |
ICEO |
VCE = 60V, IB = 0 |
- |
- |
1.0 |
mA |
Collector Cut-off Current |
ICBO |
VCB = 60V, IE = 0 |
- |
- |
0.5 |
mA |
Emitter Cut-off Current |
IEBO |
VEB = 5.0V, IC = 0 |
- |
- |
2.0 |
mA |
Collector-Emitter Sustaining Voltage |
VCEO |
IC = 30mA, IB = 0 |
60 |
- |
- |
V |
DC Current Gain |
hFE(1) |
VCE = 3.0V, IC = 4.0A |
2000 |
- |
- |
|
hFE(2) |
VCE = 3.0V, IC = 10A |
500 |
- |
- |
||
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 10A, IB = 100mA |
- |
- |
2.5 |
V |
IC = 15A, IB = 150mA |
- |
- |
4.0 |
|||
Base-Emitter Saturation Voltage |
VBE(sat) |
IC = 10A, IB = 100mA |
- |
- |
3.5 |
V |
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