TO-92 TRANSISTOR DE PLÁSCO PNP Transistor 2N3906
$8.5100-499 Others
$6.9≥500Others
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Air |
Hafen: | SHANGHAI |
$8.5100-499 Others
$6.9≥500Others
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Air |
Hafen: | SHANGHAI |
Modelo: YZPST-2N3904
Lugar De Origen: porcelana
Collector-Base Voltage: 60V
Collector-Emitter Voltage: 40V
Emitter-Base Voltage: 6V
Collector Current -Continuous: 0.2A
Collector Power Dissipation: 0.625W
Operation Junction And Storage Temperat: -55-150℃
TO-92 transistores de plástico-encapsulado
Transistor YZPST-2N3904 (NPN)
La designación de tipo MMBT3904
INFORMACIÓN SOBRE PEDIDOS
Part Number |
Package |
Packing Method |
Pack Quantity |
2N3904 |
T0-92 |
BuIk |
1000pcs/Bag |
2N3904-TA |
T0-92 |
Tape |
2000pcs/Box |
Calificaciones máximas (ta = 25 '℃ a menos que se indique lo contrario)
Symbo1 | Parameter | Va1ue | Unit |
VCB0 | Collector-Base Voltage | 60 | V |
VCE0 | Collector-Emitter Voltage | 40 | V |
VEB0 | Emitter-Base Voltage | 6 | V |
C | Collector Current -Continuous | 0.2 | A |
PC | Collector Power Dissipation | 0.625 | W |
TJ,Tstg | Operation Junction and Storage Temperature Range | -205 | C |
= 25 ℃ a menos que se especifique lo contrario
Parameter | Symbo1 | Test | Min | Typ | Max | Unit |
conditions | ||||||
Co11ector﹒base | V(BR)CBO | IC=10ΚA, IE=0 | 60 | V | ||
breakdown | ||||||
vo1tage | ||||||
Co11ector﹒emitter | V(BR)CEO | IC= 1mA , IB=0 | 40 | V | ||
breakdown | ||||||
vo1tage | ||||||
Emitter﹒base | V(BR)EBO | IE= 10ΚA, IC=0 | 6 | V | ||
breakdown | ||||||
vo1tage | ||||||
Co11ector cut﹒off | ICBO | VCB=60V, IE=0 | 0.1 | UA | ||
current | ||||||
Co11ector | ICEX | VCE=30V, VEB(off)=3V | 0.05 | UA | ||
cut﹒off | ||||||
current | ||||||
Emitter | IEBO | VEB= 5V, IC=0 | 0.1 | UA | ||
cut﹒off | ||||||
current | ||||||
FE1 | VCE=1V, IC=10mA | 100 | 400 | |||
DC | ||||||
current | FE2 | VCE=1V, IC=50mA | 60 | |||
gain | FE3 | VCE=1V, IC=100mA | 30 | |||
Co11ector﹒emitter | VCE(sat) | IC=50mA, IB=5mA | 0.3 | V | ||
saturation | ||||||
vo1tage | ||||||
Base﹒emitter | VBE(sat) | IC=50mA, IB=5mA | 0.95 | V | ||
saturation | ||||||
vo1tage | ||||||
Transition | T | VCE=20V,IC=10mA,f=100MHz | 300 | MHZ | ||
frequency | ||||||
De1ay | td | VCC=3V,VBE=0.5V, | 35 | ns | ||
Time | IC=10mA,IB1=1mA | |||||
Rise | tr | 35 | ns | |||
Time | ||||||
Storage | ts | VCC=3V, IC=10mA | 200 | ns | ||
Time | IB1=IB2=1mA | |||||
Fa11 | tf | 50 | ns | |||
Time |
Symbo1 | Dimensions | Dimensions | ||
n | ln | |||
Mi11imeters | lnches | |||
Min | Max | Min | Max | |
A | 3.3 | 3.7 | 0.13 | 0.146 |
A1 | 1.1 | 1.4 | 0.043 | 0.055 |
b | 0.38 | 0.55 | 0.015 | 0.022 |
c | 0.36 | 0.51 | 0.014 | 0.02 |
D | 4.3 | 4.7 | 0.169 | 0.185 |
D1 | 3.43 | 0.135 | ||
E | 4.3 | 4.7 | 0.169 | 0.185 |
e | 1.270 TYP | 0.050 TYP | ||
e1 | 2.44 | 2.64 | 0.096 | 0.104 |
L | 14.1 | 14.5 | 0.555 | 0.571 |
Κ | 1.6 | 0.063 | ||
h | 0 | 0.38 | 0 | 0.015 |
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