Convertidor TO-247 DC-AC Transistores NPN complementarios
Obtener el último precioTipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Modelo: YZPST-2SDW100
Marca: YZPST
Transistores Darlington de potencia complementaria
YZPST-2SDW100
Caracteristicas
■ Transistores NPN - PNP complementarios
■ Configuración monolítica de Darlington
Aplicaciones
■ amplificador de potencia de audio
■ Convertidor CC-CA
■ Unidad de motor de CC de baja tensión
■ Aplicaciones de conmutación de propósito general
Descripción
Los dispositivos están fabricados en tecnología plana con el diseño de la "isla base" y la configuración monolítica de Darlington.
T a b le 1 . D e v i c e s ummary
Order code |
Marking |
Package |
Packaging |
2SDW100 |
2SDW100 |
TO-247 |
Tube |
2SDW200 |
2SDW200 |
1 Absoluto maxi m un calificaciones
T a b le 2 . Ab s o l ut e m a x yo m u m ra ti NGS
Symbol |
Parameter |
Value |
Unit |
|
NPN |
2SDW100 |
|||
PNP |
2SDW200 |
|||
VCBO |
Collector-emitter voltage (IE = 0) |
80 |
V |
|
VCEO |
Collector-emitter voltage (IB = 0) |
80 |
V |
|
IC |
Collector current |
25 |
A |
|
ICM |
Collector peak current (tP < 5 ms) |
40 |
A |
|
IB |
Base current |
6 |
A |
|
IBM |
Base peak current (tP < 5 ms) |
10 |
A |
|
PTOT |
Total dissipation at Tc ≤ 25 °C |
130 |
W |
|
TSTG |
Storage temperature |
-65 to 150 |
°C |
|
TJ |
Max. operating junction temperature |
150 |
°C |
No t e : F o PN P ty p e v ol t a ge y nd c u r r e nt v al u e s a r e n e g a ti v e
T a b le 3 . T herm al d a ta
Symbol |
Parameter |
Value |
Unit |
RthJC |
Thermal resistance junction-case max |
0.96 |
°C/W |
2 Eléctrico c h aracteristics
T ca s e = 2 5 ° C; a no ser que otro w ise spe c ified.
|
Symbol |
Parameter |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
ICBO |
Collector cut-off current (IE = 0) |
VCE = 80 V |
|
|
0.5 |
mA |
ICEV |
Collector cut-off current (VBE = - 0.3 V) |
VCE = 80 V |
|
|
0.1 |
mA |
ICEO |
Collector cut-off current (IB = 0) |
VCE = 60 V |
|
|
0.5 |
mA |
IEBO |
Emitter cut-off current (IC = 0) |
VEB = 5 V |
|
|
2 |
mA |
VCEO(sus) (1) |
Collector-emitter sustaining voltage (IB = 0) |
IC = 50 mA |
80 |
|
|
V |
VCE(sat)(1) |
Collector-emitter saturation voltage |
IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA |
|
|
1.2 1.75 3.5 |
V V V |
VBE(sat)(1) |
Base-emitter saturation voltage |
C B |
|
|
3.3 |
V |
(1) |
Base-emitter voltage |
I = 10 A V = 3 V |
1 |
|
3 |
V |
hFE(1) |
DC current gain |
IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V |
600 500 300 |
|
15000 12000 6000 |
|
VF(1) |
Diode forward voltage |
IF = 10 A |
|
TBD |
|
V |
Is/b |
Second breakdown current |
VCE = 25 V t = 500 ms |
|
TBD |
|
A |
1. Prueba de pulso: duración del impulso ≤ 300 μs, ciclo de trabajo ≤ 2%.
Para el tipo PNP, los valores de tensión y corriente son negativos.
TO- 2 4 7 M e ch a ni c a l datos
Dim. |
mm. |
||
Min. |
Typ |
Max. |
|
A |
4.85 |
|
5.15 |
A1 |
2.20 |
|
2.60 |
b |
1.0 |
|
1.40 |
b1 |
2.0 |
|
2.40 |
b2 |
3.0 |
|
3.40 |
c |
0.40 |
|
0.80 |
D |
19.85 |
|
20.15 |
E |
15.45 |
|
15.75 |
e |
|
5.45 |
|
L |
14.20 |
|
14.80 |
L1 |
3.70 |
|
4.30 |
L2 |
|
18.50 |
|
øP |
3.55 |
|
3.65 |
øR |
4.50 |
|
5.50 |
S |
|
5.50 |
|
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