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Home > Lista de Productos > Dispositivos de disco semiconductor (tipo cápsula) > Tiristor de control de fase > Controlador de tiristor certificado 5200V bv
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| Precio unitario: | USD 400 - 650 / Piece/Pieces |
|---|---|
| Tipo de Pago: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Cantidad de pedido mínima: | 1 Piece/Pieces |
| Plazo de entrega: | 30 días |
Información básica
Modelo: YZPST-5STP34N5200
Información adicional
productividad: 100
Marca: YZPST
transporte: Ocean,Air
Lugar de origen: China
Capacidad de suministro: 500
Certificados : ISO9001-2008,ROHS
HS-Code: 85413000
Hafen: Shanghai
DDescripción
TIRISTOR DE ALTA POTENCIA PARA CONTROL DE FASE
YZPST-5STP34N5200
caracteristicas:
. Toda estructura difusa
. Configuración de compuerta de amplificación central
. Máximo tiempo de apagado garantizado
. Alta capacidad dV / dt
. Dispositivo ensamblado a presión
Bloqueo - Estado desactivado
|
VRRM (1) |
VDRM (1) |
VRSM (1) |
|
5200 |
5200 |
5300 |
V RRM = voltaje inverso de pico repetitivo
V DRM = Voltaje repetitivo de estado pico apagado
V RSM = Tensión inversa pico no repetitiva (2)
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
30 mA 95mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
2000 V/msec |
Conducción - en estado
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Max. Average value of on-state current |
IT(AV)M |
|
3600 |
|
A |
Sinewave,180o conduction TC = 70 oC |
|
RMS value of on-state current |
ITRMS |
|
5850 |
|
A |
Nominal value |
|
Peak one cpstcle surge (non repetitive) current |
ITSM |
|
63 |
|
kA |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
19.8×103 |
|
kA2s |
|
|
Latching current |
IL |
|
500 |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
125 |
|
mA |
VD = 24 V; I =2.5 A |
|
Peak on-state voltage |
VTM |
|
1.54 |
|
V |
ITM =3000 A; Tvj=125℃ |
|
Threshold voltage |
VTO |
|
1.03 |
|
V |
Tvj=125℃ |
|
Slope resistance |
Rt |
|
0.16 |
|
mΩ |
Tvj=125℃ |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1500 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
200 |
|
A/ms |
Switching from VDRM £ 1500 V |
CARACTERÍSTICAS ELÉCTRICAS Y CLASIFICACIONES (cont.)
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
- |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
7 |
|
W |
|
|
Peak gate current |
IGM |
|
10 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
- 400 - |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units |
VGT |
|
- 2.6 - |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
10 |
|
V |
|
Dinámica
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
- |
|
ms |
ITM =50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
|
Turn-off time (with VR = -50 V) |
tq |
|
700 |
|
ms |
ITM = 2000 A; di/dt = 1.5 A/ms; VR ³200 V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM; VG = 0; Tj = 125 oC; Duty cpstcle ³ 0.01% |
|
Reverse recovery charge |
Qrr |
|
5200 |
|
mAs |
ITM = 2000 A; di/dt = 1.5 A/ms; VR ³200 V |
* Para máximo garantizado valor, póngase en contacto con la fábrica.
CARACTERÍSTICAS Y CLASIFICACIONES TÉRMICAS Y MECÁNICAS
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+140 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
5.7 11.4 |
|
K/kW |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
1 2 |
|
K/kW |
Double sided cooled * Single sided cooled * |
|
Thermal resistance - junction to heatsink |
RQ (j-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
|
Mounting force |
P |
81 |
108 |
- |
kN |
|
|
Weight |
W |
- |
- |
2.9 |
Kg |
|
* Superficies de montaje lisas, planas y engrasadas
Nota: para el esquema y las dimensiones del caso, vea el dibujo del esquema del caso en la última página de esta Información técnica
|
Sym |
A |
B |
C |
D |
H |
|
mm |
150 |
100 |
108 |
3.5×3 |
35±1 |
PRODUCTOS POR GRUPO : Dispositivos de disco semiconductor (tipo cápsula) > Tiristor de control de fase
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Mr. John chang
Número de Teléfono:86-514-87782298
Fax:86-514-87782297
Móvil:+8613805278321
Email:info@yzpst.com
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu
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