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Semiconductor Devices DCR504 Power Thyristor

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FOB,CFR,CIF

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30 Days

Transportation:

Ocean,Air

Port:

SHANGHAI

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DDescripción

Product Attributes
Supply Ability & Additional Informations

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Overview

Product Attributes

Modelo: YZPST-DCR504

Marca: YZPST

Supply Ability & Additional Informations

transporte: Ocean,Air

Certificados : ISO9000

Hafen: SHANGHAI

Tipo de Pago: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Plazo de entrega: 30 días

Control de fase de tiristor de alta potencia

YZPST-DCR504

Hay muchas características del Semiconductor Devices DCR504 Power Thyristor . Son de alta capacidad dV / dt . Configuración de compuerta amplificadora circular . Capacidad de bloqueo hasta 1200 voltios . Toda estructura difusa . Tiempo máximo garantizado de apagado. Dispositivo ensamblado a presión.

Semiconductor Devices DCR504 Power Thyristor

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		300		A	Sinewave,180^o conduction,T_c=65^oC
RMS value of on-state current	I_TRMS		480		A	Nominal value
Peak one cycle surge (non repetitive) current	I_TSM		4200 4400		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		68000		A²s	8.3 msec
Latching current	I_L			300	mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H			200	mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		2.98		V	I_TM = 1500 A; Tj = 25 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		300		A/ms	Switching from V_DRM£ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		150		A/ms	Switching from V_DRM£ 1000 V

CARACTERÍSTICAS ELÉCTRICAS Y CALIFICACIONES Gating Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		10		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		2		W
Peak gate current	I_GM		3		A
Gate current required to trigger all units	I_GT		200 150 125		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.30	3 2.5		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.0		ms	I_TM = 100 A; V_D = V_DRM Gate pulse: V_G = 10 V; R_G = 25 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		200		ms	I_TM > 250 A; di/dt = 10 A/ms; V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to V_DRM ; T_j = 125 ^oC; Duty cycle ³ 0.01%
Reverse recovery charge	Q_rrr		200		mCb	I_TM > 400 A; di/dt = 10 A/ms;

CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		0.095		^oC/W	Double sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		0.06		^oC/W	Double sided cooled *
Mounting force	P	3.2	3.9		kN
Weight	W			57	g.