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Home > Lista de Productos > Dispositivos de disco semiconductor (tipo cápsula) > Tiristor de control de fase > Semiconductor Devices DCR504 Power Thyristor
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| Tipo de Pago: | L/C,T/T,Paypal |
|---|---|
| Incoterm: | FOB,CFR,CIF |
| Plazo de entrega: | 30 días |
Información básica
Modelo: YZPST-DCR504
Información adicional
Marca: YZPST
transporte: Ocean,Air
Certificados : ISO9000
Hafen: SHANGHAI
DDescripción
Control de fase de tiristor de alta potencia
YZPST-DCR504
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
300 |
|
A |
Sinewave,180o conduction,Tc=65oC |
|
RMS value of on-state current |
ITRMS |
|
480 |
|
A |
Nominal value |
|
Peak one cycle surge (non repetitive) current |
ITSM |
|
4200
4400 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
68000 |
|
A2s |
8.3 msec |
|
Latching current |
IL |
|
|
300 |
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
|
200 |
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
2.98 |
|
V |
ITM = 1500 A; Tj = 25 oC |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
150 |
|
A/ms |
Switching from VDRM£ 1000 V |
CARACTERÍSTICAS ELÉCTRICAS Y CALIFICACIONES Gating Dynamic
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
10 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
2 |
|
W |
|
|
Peak gate current |
IGM |
|
3 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
200 150 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units
|
VGT |
0.30 |
3 2.5
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
1.0 |
|
ms |
ITM = 100 A; VD = VDRM Gate pulse: VG = 10 V; RG = 25 ohms; tr = 0.1 ms; tp = 20 ms |
|
Turn-off time (with VR = -50 V) |
tq |
|
200
|
|
ms |
ITM > 250 A; di/dt = 10 A/ms; VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to VDRM ; Tj = 125 oC; Duty cycle ³ 0.01% |
|
Reverse recovery charge |
Qrrr |
|
200 |
|
mCb |
ITM > 400 A; di/dt = 10 A/ms; |
CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.095 |
|
oC/W |
Double sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.06 |
|
oC/W |
Double sided cooled * |
|
Mounting force |
P |
3.2 |
3.9 |
|
kN |
|
|
Weight |
W |
|
|
57 |
g. |
|
* Superficies de montaje lisas, planas y engrasadas
Nota: para el contorno y las dimensiones del caso, consulte el dibujo del esquema del caso en la última página de esta Información técnica
RESUMEN Y DIMENSIONES DEL CASO.
PRODUCTOS POR GRUPO : Dispositivos de disco semiconductor (tipo cápsula) > Tiristor de control de fase
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Fax:86-514-87782297
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Email:info@yzpst.com
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