Control de tiristor de alto voltaje SCR kp1000A 6500V
Obtener el último precioTipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Modelo: YZPST-KP1000A6500V
Marca: YZPST
Tiristores de control de fase
YZPST-KP1000A6500V
Los tiristores de control de fase 6600V son cortos para el rectificador tiristor. Es un tipo de dispositivo semiconductor de alta potencia con cuatro capas de tres uniones PN, también llamado tiristor. Con las características de pequeño volumen, estructura simple y función fuerte, es uno de los dispositivos semiconductores más comúnmente utilizados.
Symbol |
Definition |
Conditions |
|
min. |
typ. |
max. |
Unit |
V |
max. non-repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
6600 |
V |
|
V |
max. repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
6500 |
V |
|
VT |
On-state voltage |
IT=1000 A |
TJ = 25°C |
|
|
2.95 |
V |
IT(AV) |
average forward current |
TC=25°C |
|
|
|
1000 |
A |
IT(RMS) |
RMS forward current |
180° sine |
|
|
|
1140 |
A |
RthJC |
thermal resistance junction to case |
|
|
|
|
22 |
K/KW |
RthCH |
thermal resistance case to heatsink |
|
|
|
|
4 |
K/KW |
ITSM |
max. forward surge current |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
9.7 |
kA |
I²t |
value for fusing |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
470 |
kA²s |
di/dt |
Rate of rise of on-state current |
TJ = 125°C; f = 50 Hz tP=200µs;diG/dt=0.15A/µs; IG=0.15A;VD= 2/3VDRM |
repetitive |
|
|
50 |
A/µs |
non-repet |
|
|
1000 |
A/µs |
|||
dv/dt |
Maximum linear rate of rise of off-state voltage |
VD= 2/3 RGK =∞; method 1 (linear voltage rise) |
TJ = 125°C |
|
|
2000 |
V/µs |
VGT |
gate trigger voltage |
VD = 6V |
TJ = 25°C |
|
|
2.6 |
V |
IGT |
gate trigger current |
VD = 6V |
TJ = 25°C |
|
|
400 |
mA |
IL |
latching current |
|
TJ = 25°C |
|
|
500 |
mA |
IH |
holding current |
|
TJ = 25°C |
|
|
900 |
mA |
tgd |
gate controlled delay time |
|
TJ = 25°C |
|
|
3 |
µs |
tq |
Turn-off time |
VR=10 V; IT=20A; VD= 2/3 |
TJ = 150°C |
|
|
600 |
µs |
Tstg |
storage temperature |
|
|
-40 |
|
140 |
°C |
TJ |
virtual junction temperature |
|
|
|
|
125 |
°C |
Wt |
Weight |
|
|
|
|
|
g |
F |
mounting force |
|
|
14 |
22 |
24 |
kN |
Dibujo de esquema
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.