| Tipo de Pago: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| transporte: | Ocean,Air |
| Hafen: | SHANGHAI |
Modelo: YZPST-DCR1020SF65
Marca: YZPST
| Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico |
| Descargar | : |
|
Tiristor de alta potencia
YZPST-DCR1020SF65
Todas las calificaciones se especifican para Tj = 25 oC a menos que se indique lo contrario.
(1) Todas las clasificaciones de voltaje se especifican para una forma de onda sinusoidal de 50Hz / 60zHz aplicada en el rango de temperatura de -40 a +125 oC.
(2) 10 mseg. max. ancho de pulso
(3) Valor máximo para Tj = 125 oC.
(4) Valor mínimo para forma de onda lineal y exponencial a 80% VDRM nominal. Puerta abierta. Tj = 125 oC.
(5) Valor no repetitivo.
(6) El valor de di / dt se establece de acuerdo con la norma EIA / NIMA RS-397, Sección 5-2-2-6. El valor definido sería adicionalmente.
Se obtiene de un circuito amortiguador, que comprende un condensador de 0.2 F y una resistencia de 20 ohmios en paralelo con el tiristor sometido a prueba.
Características:. Toda la estructura difusa . Configuración de la puerta de amplificación central . Bloqueo de capacidad hasta 4200 voltios.
. Tiempo máximo de apagado garantizado . Alta capacidad dV / dt . Dispositivo ensamblado a presión
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
640 |
|
A |
Sinewave,180o conduction,T =60oC c |
|
RMS value of on-state current |
ITRMS |
|
1005 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
8.5 |
|
KA KA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC |
|
I square t |
I2t |
|
0.36x106 |
|
A2s |
8.3 msec and 10.0 msec |
|
Latching current |
IL |
|
600 |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
200 |
|
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
3.6 |
|
V |
ITM = 1800 A; Duty cPSTCle 0.01%; T = 25 oC j |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
- |
|
A/ s |
Switching from VDRM 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
100 |
|
A/ s |
Switching from VDRM 1000 V |
E L E CTR I C A L CH A R A C T E R ES T I C S A N D R A T I N G S
|
G a t i n g
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
150 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
- |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
- 300 - |
|
mA mA mA |
V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = +25 oC D L j V = 6 V;R = 3 ohms;T = +125oC D L j |
|
Gate voltage required to trigger all units |
V |
|
- 3.0 - |
|
V V V |
V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = 0-125oC D L j VD = Rated VDRM; RL = 1000 ohms; T = + 125 oC j |
|
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
D y n a m i c
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
- |
0.5 |
s |
ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s |
|
Turn-off time (with VR = -50 V) |
tq |
|
- |
600 |
s |
ITM = 1000 A; di/dt = 25 A/ s; VR -50 V; Re-applied dV/dt = 20 V/ s linear to 80% VDRM; VG = 0; T = 125 oC; Duty cPSTCle j 0.01% |
|
Reverse recovery charge |
Qrr |
|
* |
|
C |
ITM = 1000 A; di/dt = 25 A/ s; VR -50 V |
* F o r gu a r a n e re m a x v a lu e c on t a c t f a c t o r y.
T H E R M A L A N D ME CH A N I C A L CH A R A C T E R ES T I C S A N D R A T I N G S
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+125 |
|
oC |
|
|
Thermal resistance - junction to case |
R (j-c) |
|
0.022 0.052 |
|
o C/W |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
R (c-s) |
|
0.004 0.008 |
|
o C/W |
Double sided cooled * Single sided cooled * |
|
Thermal resistamce - junction to sink |
R (j-s) |
|
- - |
|
o C/W |
Double sided cooled * Single sided cooled * |
|
Mounting force |
P |
18 |
22 |
|
kN |
|
|
Weight |
W |
|
|
- |
g |
|
* M ou n t i ng s ur f a c a s m oo t h f l a t y g r e a s ed
ESQUEMA Y DIMENSIONES DEL CASO
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Whatsapp: +8613805278321
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
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