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YANGZHOU POSITIONING TECH CO., LTD.
Inicio> Lista de Productos> Dispositivos de disco de semiconductores (tipo de cápsula)> Control de fase tiristor> Todo el tiristor de estructura difusa 1000A 1800V
Todo el tiristor de estructura difusa 1000A 1800V
Todo el tiristor de estructura difusa 1000A 1800V
Todo el tiristor de estructura difusa 1000A 1800V

Todo el tiristor de estructura difusa 1000A 1800V

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Atributos del producto

ModeloYZPST-KP1000A1800V

MarcaYZPST

Descripción

Tiristores de control de fase

YZPST-KP1000A1800V

Todo el tiristor de estructura difusa 1000A 1800V estructura simple y función fuerte, es uno de los dispositivos semiconductores más comúnmente utilizados.

Thyristor

Ratings

Symbol

Definition

Conditions

 

min.

typ.

max.

Unit

V EQ \F(RSM,DSM)

max. non-repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

1900

V

V EQ \F(RRM,DRM)

max. repetitive reverse/forward blocking voltage

TJ = 25°C

 

 

1800

V

VT

On-state voltage

IT=2200 A

TJ = 25°C

 

 

1.85

V

IT(AV)

average forward current

TC=25°C

 

 

 

1000

A

IT(RMS)

RMS forward current

180° sine

 

 

 

2300

A

RthJC

thermal resistance junction to case

 

 

 

 

 

K/W

RthCH

thermal resistance case to heatsink

 

 

 

 

 

K/W

RthJK

thermal resistance junction to heatsink

 

 

 

 

0.024

K/W

ITSM

max. forward surge current

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

12.1

kA

I²t

value for fusing

t = 10 ms; (50 Hz), sine

TJ = 25°C

 

 

732

kA²s

di/dt

Rate of rise of on-state current

TJ = 125°C; f = 50 Hz

tP=200µs;diG/dt=0.15A/µs;

IG=0.15A;VD= ⅔VDRM

repetitive

 

 

200

A/µs

non-repet

 

 

400

A/µs

dv/dt

Maximum linear rate of rise of off-state voltage

VD= ⅔VDRM

RGK =∞; method 1 (linear voltage rise)

TJ = 125°C

 

 

200

V/µs

VGT

gate trigger voltage

VD = 6V

TJ = 25°C

 

 

3.0

V

IGT

gate trigger current

VD = 6V

TJ = 25°C

 

 

300

mA

IL

latching current

 

TJ = 25°C

 

 

 

A

IH

holding current

 

TJ = 25°C

 

 

500

mA

tgd

gate controlled delay time

 

TJ = 25°C

 

1.0

1.5

µs

tq

Turn-off time

VR=10 V; IT=20A; VD=⅔VDRM

TJ = 150°C

 

600

650

µs

Tstg

storage temperature

 

 

-40

 

125

°C

TJ

virtual junction temperature

 

 

-40

 

125

°C

Wt

Weight

 

 

 

 

 

g

F

mounting force

 

 

19

 

29

kN

Dibujo de esquema

Phase Control Thyristors YZPST-KP1000A1800V


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