Control de fase de tiristor de alta potencia

Tipo de Pago:	L/C,T/T,Paypal
Incoterm:	FOB,CFR,CIF
Plazo de entrega:	30 días

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Información básica

Modelo: YZPST-KP738LT

Información adicional

Paquete: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico

productividad: 100

Marca: YZPST

transporte: Ocean,Air

Lugar de origen: China

Capacidad de suministro: 500

Certificados : ISO9001-2008

HS-Code: 85413000

Hafen: SHANGHAI

DDescripción

Control de fase de tiristor de alta potencia

PST-KP 738LT

KP738LT thyristor

caracteristicas: . Toda la estructura difusa . Configuración de puerta de amplificación lineal . Bloqueo de capacidad hasta 22 00 voltios.

. Tiempo máximo de apagado garantizado . Alta capacidad dV / dt . Dispositivo ensamblado a presión

Conduciendo - en estado

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		3200		A	Sinewave,180^o conduction,T_hs=85^oC
Peak one cpstcle surge (non repetitive) current	I_TSM		45000 41500		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		8.5x10⁶		A²s	10.0 msec
Latching current	I_L		400		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		100		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.30		V	I_TM = 2000 A; Duty cpstcle £ 0.01% T_j = 25 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		150		A/ms	Switching from V_DRM£ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		100		A/ms	Switching from V_DRM£ 1000 V

CARACTERÍSTICAS ELÉCTRICAS Y CALIFICACIONES.

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		15		A
Gate current required to trigger all units	I_GT		300 200 125		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.30	5 4		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		15		V

Dinámica

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		3.0	2.5	ms	I_TM = 50 A; V_D = 1500 V Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		400	250	ms	I_TM > 2000 A; di/dt = 10 A/ms; V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cpstcle ³ 0.01%
Reverse recovery current	I_rr		200		A	I_TM > 2000 A; di/dt = 10 A/ms; V_R³ -50 V

CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES.

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_{Q (j-c)}		0.012		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_{Q (c-s)}		0.002		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	8000 35.5	10000 44.4		lb. kN
Weight	W			3.5 1.60	Lb. Kg.