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YANGZHOU POSITIONING TECH CO., LTD.
Lista de Productos
Modelo: YZPST-KP738LT
Marca: YZPST
Paquete: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico
productividad: 100
transporte: Ocean,Air
Lugar de origen: China
Capacidad de suministro: 500
Certificados : ISO9001-2008
HS-Code: 85413000
Hafen: SHANGHAI
Tipo de Pago: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Plazo de entrega: 30 días
Control de fase de tiristor de alta potencia
PST-KP 738LT
caracteristicas: . Toda la estructura difusa . Configuración de puerta de amplificación lineal . Bloqueo de capacidad hasta 22 00 voltios.
. Tiempo máximo de apagado garantizado . Alta capacidad dV / dt . Dispositivo ensamblado a presión
Conduciendo - en estado
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
3200 |
|
A |
Sinewave,180o conduction,Ths=85oC |
|
Peak one cpstcle surge (non repetitive) current |
ITSM |
|
45000
41500 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
8.5x106 |
|
A2s |
10.0 msec |
|
Latching current |
IL |
|
400 |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
100 |
|
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
1.30 |
|
V |
ITM = 2000 A; Duty cpstcle £ 0.01% Tj = 25 oC |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
150 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
100 |
|
A/ms |
Switching from VDRM£ 1000 V |
CARACTERÍSTICAS ELÉCTRICAS Y CALIFICACIONES.
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
15 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 4
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
15 |
|
V |
|
Dinámica
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
3.0 |
2.5 |
ms |
ITM = 50 A; VD = 1500 V Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
|
Turn-off time (with VR = -50 V) |
tq |
|
400
|
250 |
ms |
ITM > 2000 A; di/dt = 10 A/ms; VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cpstcle ³ 0.01% |
|
Reverse recovery current |
Irr |
|
200 |
|
A |
ITM > 2000 A; di/dt = 10 A/ms; VR³ -50 V |
CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES.
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012
|
|
oC/W |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002
|
|
oC/W |
Double sided cooled * Single sided cooled * |
|
Mounting force |
P |
8000 35.5 |
10000 44.4 |
|
lb. kN |
|
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
* Superficies de montaje lisas, planas y engrasadas.
Nota: para el esquema y las dimensiones del caso, consulte el dibujo del esquema del caso en la página 3 de esta Información técnica
ESQUEMA Y DIMENSIONES DEL CASO
PRODUCTOS POR GRUPO : Dispositivos de disco semiconductor (tipo cápsula) > Tiristor de control de fase
Realizar consulta
Mr. John chang
Número de Teléfono:86-514-87782298
Fax:86-514-87782297
Móvil:+8613805278321
Email:info@yzpst.com
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu
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