Módulo de potencia IGBT UPS 1700V

$1952-99 Piece/Pieces

$135≥100Piece/Pieces

Descripción

Atributos del producto

Modelo: YZPST-450B170E53

VCES: 1700V

IC: 450V

ICRM: 900A

VGES: ±20V

Ptot: 3260W

ICES: 1.0mA

Embalaje y entrega

Unidades de venta	:	Piece/Pieces
Tipo de paquete	:	1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje de protección de plástico
Descargar	:

Módulo IGBT YZPST-450B170E53



Descripción

Módulo de potencia IGBT YZPST-450B170E53

Aplicaciones
Inversor para accionamiento de motor
Amplificador de accionamiento de Servo AC y DC
UPS (fuentes de alimentación ininterrumpidos)

Fines _

VCE bajo (SAT) con tecnología SPT+ IGBT

VCE (SAT) con coeficiente de temperatura positiva

Incluyendo FWD antiparalelo de recuperación rápida y suave

Capacidad alta de cortocircuito (10us)

Estructura del módulo de baja inductancia

Temperatura máxima de unión 175c

Calificaciones máximas absolutas

Parameter	Symbol	Conditions	Value	Unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25C	1700	V
Continuous Collector Current	IC	Tc=100C	450	A
Peak Collector Current	ICRM	tp=1ms	900	A
Gate-Emitter Voltage	VGES	Tvj=25C	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25C Tvjmax=175C	3260	W

Características de IGBT

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Gate-emitter Threshold Voltage	VGE(th)	VGE=VCE, IC =24mA,Tvj=25C	5.4	6.2	7.4	V
Collector-Emitter Cut-off Current	ICES	VCE=1700V,VGE=0V, Tvj=25C			1	mA
		Ic=450A,VGE=15V, Tvj=25C		2.4	2.75	V
		Ic=450A,VGE=15V, Tvj=25C		2.4	2.75	V
Collector-Emitter	VCE(sat)	Ic=450A,VGE=15V, Tvj=125C		2.8		V
Saturation Voltage		Ic=450A,VGE=15V, Tvj=150C		2.9		V
Gate Charge	G			2.7		uC
Input Capacitance	Cies			30		nF
Input Capacitance	Cies			30		nF
Output Capacitance	Coes	VCE=25V,VGE =0V,		1.65		nF
Reverse Transfer Capacitance	Cres	f=1MHz, Tvj=25C		1.08		nF
Gate-Emitter leakage current	IGES	VCE=0 V, VGE=20 V, Tvj = 25C			400	nA
Turn-on Delay Time	td(on)			510		ns


Rise Time	tr	IC =450 A		180		ns
Turn-off Delay Time	td(off)	VCE = 900 V		620		ns
Fall Time	tf	VGE = ±15V		185		ns
Energy Dissipation During Turn-on Time	Eon	RG = 3.3Ω		126		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=25C		89		mJ
Turn-on Delay Time	td(on)			512		ns


Rise Time	tr	IC =450 A		190		ns
Turn-off Delay Time	td(off)	VCE = 900 V		712		ns
Fall Time	tf	VGE = ±15V		350		ns
Energy Dissipation During Turn-on Time	Eon	RG = 3.3Ω		162		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=125C		125		mJ

Turn-on Delay Time	td(on)	IC =450 A VCE = 900 V VGE = ±15V RG = 3.3Ω Tvj=150C	515	ns
Rise Time	tr		200	ns
Turn-off Delay Time	td(off)		730	ns
Fall Time	tf		430	ns
Energy Dissipation During Turn-on Time	Eon		175	mJ
Energy Dissipation During Turn-off Time	Eoff		130	mJ
SC Data	Isc	Tp≤10us,VGE=15V, Tvj=150C,Vcc=1000V, VCEM≤1700V	1450	A

Características de diodo

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Diode DC Forward Current	IF	Tc=100C		450		A
Diode Peak Forward Current	IFRM	tp=1ms		900		A
		IF=450A,Tvj=25C		1.85		V
		IF=450A,Tvj=125C		1.92		V
Forward Voltage	VF	IF=450A,Tvj=150C		1.9		V
Recovered Charge	Qrr	IF =450 A		110		uC
Recovered Charge	Qrr	VR=900V		110		uC
Peak Reverse Recovery Current	Irr	-diF/dt =2500A/us		348		A
Reverse Recovery Energy	Erec	Tvj=25C		64.2		mJ
Recovered Charge	Qrr	IF =450 A		160		uC
Recovered Charge	Qrr	VR=900V		160		uC
Peak Reverse Recovery Current	Irr	-diF/dt =2500A/us		394		A
Reverse Recovery Energy	Erec	Tvj=125C		94.4		mJ
Recovered Charge	Qrr	IF =450 A		176		uC
Recovered Charge	Qrr	VR=900V		176		uC
Peak Reverse Recovery Current	Irr	-diF/dt =2500A/us		410		A
Reverse Recovery Energy	Erec	Tvj=150C		103.2		mJ