Proceso de pasivación de vidrio de mesa a 247 SCR 1200V
$0.751000-9999 Piece/Pieces
$0.55≥10000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Air |
Hafen: | SHANGHAI |
$0.751000-9999 Piece/Pieces
$0.55≥10000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Air |
Hafen: | SHANGHAI |
Modelo: YZPST-40TPS12
Marca: Yzpst
Lugar De Origen: porcelana
IT (RMS): 40A
VDRM / VRRM: 1200V
IGT: ≤35mA
ITSM: 460A
IGM: 4A
PGM: 5W
PG(AV): 1W
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje de protección de plástico |
Ejemplo de una imagen | : | |
Descargar | : |
SCR YZPST-40TPS12
Características del producto
Proceso de pasivación de vidrio de mesa,
El metal electrodo posterior (ánodo): Ti-Ni-Ag
El electrodo positivo (puerta, ánodo): AL
Los fines principalesInterruptor de corriente alterna,
Converter de potencia AC DC,
El control de la calefacción eléctrica
Control de velocidad del motor
PaqueteTo-247
MainFeature (TJ = 25 ℃)
Symbol |
Value |
Unit |
IT (RMS) |
40 |
A |
VDRM / VRRM |
1200 |
V |
IGT |
≤35 |
mA |
Atingos absolutos ( valores limitantes ) _
Symbol |
Parameter |
Value |
Unit |
IT (RMS) |
RMS on-state current (180°conduction angle) |
40 |
A |
ITSM
|
Non repetitive surge peak on-state Current (tp= 10ms) |
460 |
A |
IGM |
Peak gate current(tp=20us) |
4 |
A |
PGM |
Peak gate power |
5 |
W |
PG(AV) |
Average gate power |
1 |
W |
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+ 150 -40--+ 125 |
℃ |
Resistencia de Thermai s
Symbol |
Parameter |
|
Value |
Unit |
Rth (j-c) |
Junction to case |
TO-247 |
0.95 |
℃/W |
Características eléctricas _Tj = 25 ℃ a menos que se indique lo contrario
Symbol |
Test Conditions |
Value |
Unit |
|||
Min |
Type |
Max |
||||
IGT |
VD= 12V, RL=33 Ω |
---- |
----- |
35 |
mA |
|
VGT |
VD= 12V, RL=33 Ω |
----- |
----- |
1.5 |
V |
|
VGD |
VD=VDRM, RL=3.3KΩ, RGK= 1KΩ,Tj=125℃ |
0.2 |
----- |
----- |
V |
|
H |
IT=500mA |
----- |
----- |
75 |
mA |
|
L |
IG= 1.2IGT |
----- |
----- |
150 |
mA |
|
dV/dt |
VD=67%VDRM, GateOpen, Tj=110℃ |
1000 |
----- |
----- |
v/ μs |
|
VTM |
IT=80A,tp=380 μs |
----- |
----- |
1.6 |
V |
|
dI/dt |
IG=2IGT |
50 |
----- |
----- |
A/ μs |
|
I2T |
Tp= 10ms |
----- |
----- |
1060 |
A2 S |
|
IDRM |
VD=VDRM |
Tj=25℃ |
----- |
----- |
10 |
μA |
Tj=125℃ |
----- |
----- |
4 |
mA |
||
VRRM |
VR=VRRM |
Tj=25℃ |
----- |
----- |
10 |
μA |
Tj=125℃ |
----- |
----- |
4 |
mA |
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