| Tipo de Pago: | L/C,T/T,Paypal |
|---|---|
| Incoterm: | FOB,CFR,CIF |
| Plazo de entrega: | 30 días |
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Modelo: YZPST-1690-TO-247S-2
Paquete: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico
productividad: 1000
Marca: YZPST
transporte: Ocean,Air
Lugar de origen: China
Capacidad de suministro: 10000
Certificados : ISO9001-2008,ROHS
HS-Code: 85413000
Hafen: Shanghai
YZPST-1690-TO-247S
D E SCRI P TI O N:
PS T1 6 9 0 s e r i e s o f si l icon c o n trolled rec t i f i l i s, con h i g h ab i l idad t o con h st y d t h e s h o ck l o a d i n g o f lar g e c u r r en t, p ro v ide h i g h d v / d t tarifa con s t r r en g resistir un ce a e lec t r o m a g ne tic i n t e r f e re n c e. Th e y una re e s p e cialmente rec o mm en d e d f o r uso o n s o l i d st a te RELA y, mo t o rc y CLE, po w e r c ha r g e r , T - t oo ls e tc
A B S O L U TE MA X I MU M R A TINGS
|
Parameter |
Symbol |
Value |
Unit |
|
Storage junction temperature range |
Tstg |
-40-150 |
℃ |
|
Operating junction temperature range |
Tj |
-40-125 |
℃ |
|
Repetitive peak off-state voltage |
VDRM |
1600 |
V |
|
Repetitive peak reverse voltage |
VRRM |
1600 |
V |
|
Average on-state current (TC=80℃) |
IT(AV) |
56 |
A |
|
RMS on-state current(TC=80℃) |
IT(RMS) |
90 |
A |
|
Non repetitive surge peak on-state current (tp=10ms) |
ITSM |
1250 |
A |
|
I2t value for fusing (tp=10ms) |
I2t |
7800 |
A2s |
|
Critical rate of rise of on-state current (IG=2×IGT) |
dI/dt |
150 |
A/μs |
|
Peak gate current |
IGM |
10 |
A |
|
Peak gate power |
PGM |
20 |
W |
|
Average gate power dissipation(Tj=125℃) |
PG(AV) |
2 |
W |
E L E C TRICAL CH A R A A CTERI S TICS ( T j = 25 ℃ u n menos o t h e w ise r s pe ci f i e d )
|
Symbol |
Test Condition |
Value |
Unit |
||
|
MIN. |
TYP. |
MAX. |
|||
|
IGT |
VD=12V RL=30Ω |
10 |
- |
80 |
mA |
|
VGT |
- |
- |
1.5 |
V |
|
|
VGD |
VD=VDRM Tj=125℃ |
0.25 |
- |
- |
V |
|
IL |
IG=1.2 IGT |
- |
- |
200 |
mA |
|
IH |
IT=1A |
- |
- |
150 |
mA |
|
dV/dt |
VD=2/3VDRM Tj=125℃ Gate Open |
1000 |
- |
- |
V/μs |
S TA TIC C H A RA CTERI S TICS
|
Symbol |
Parameter |
Value(MAX) |
Unit |
|
|
VTM |
ITM=110A tp=380μs |
TC=25℃ |
1.8 |
V |
|
IDRM |
VD=VDRM VR=VRRM |
TC=25℃ |
50 |
μA |
|
IRRM |
TC=125℃ |
10 |
mA |
|
TÉRMICO R E S I S T A CE S
|
Symbol |
Parameter |
Value |
Unit |
|
Rth(j-c) |
junction to case(DC) |
0.27 |
℃/W |
PRODUCTOS POR GRUPO : Paquete de plástico semiconductor > Rectificador controlado de silicio (SCR)
Mr. John chang