Módulo de diodo de recuperación super rápida de Silicon Super Recuperación de Silicon Silicon de alta sobretensión

Symbol

Condition

Ratings

Unit

I_F(AV)M

T_C=100°C; 180° sine

150

A

I_FRMS

maximum value for continuous operation

A

I_FSM

T_j=25°C; t = 8.3 ms (50 Hz); sine

2100

A

I²t

T_j=25°C; t = 8.3 ms (50 Hz); sine

1830

kA²S

V_iso

A.C.1minute/1second

-

V

T_j

-40  ~  + 175

°C

T_stg

-40  ~  + 150

°C

M

mounting torque; ±15%

4

Nm

terminal torque; ±15%

3

Nm

W

approx.

95

g

I_RRM

AtV_RRM，Single phase，half wave，T_j=100°C

1

mA

V_FM

On-State Current 150A，T_j=25°C

1.40

V

V_F0

T_j=150°C

-

V

r_F

T_j=150°C

-

mΩ

t_rr

T_j=25°C; I_F = 150A; -di_F/dt =300A/μs; V_R = 200V;

120

ns

Q_rr

T_j=150°C; I_F = 50A; -di_F/dt = 100A/μs; V_R = 100V

-

us

I_RM

-

A

R_th(j-c)

Per Module

0.12

°C/W

R_th(c-h)

Per Module

-

°C/W