Un módulo de tiristor de montaje de tornillo de 800V
$10.51-19 Piece/Pieces
$7.5≥20Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | SHANGHAI |
$10.51-19 Piece/Pieces
$7.5≥20Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | SHANGHAI |
Modelo: YZPST-SK70KQ08
Marca: Yzpst
Solicitud: Alta frecuencia, Espejo actual
Tipo De Alimentación: Fabricante original, ODM, Agencia, otro
Materiales De Referencia: ficha de datos, Foto, otro
Tipo De Paquete: Montaje superficial, Agujero pasante
Metodo De Instalacion: A través del orificio, Montaje superficial
Función FET: Carburo de silicio (SiC), Estándar, Super Junction, GaNFET (nitruro de galio), No aplica
Configuración: Único, Tipo T, Interruptor único, No aplica
VRRM/VDRM Tvj=125℃: 800V
VRSM/VDSM Tvj=125℃: 900V
IRRM/IDRM Tvj=125℃: 5mA
IT(AV) TC=85℃: 55A
IT(RMS) TC=85℃, Sin180°: 80A
ITSM 10ms, Tj=25℃: 1100A
I2t: 6050A2S
VTM: 1.7V
RoHS
Características de productos s
Diseño compacto
Montaje de un tornillo
Transferencia de calor y aislamiento a través de DBC
Chips de tiristores de pasivación de vidrio
Baja corriente de fuga
App Li Cat I en S
Entrantes suaves
Control de temperatura
Control de luz
A bs o l u te m a x i m u m r a t i ng s (tc = 25 ° C a menos que se especifique lo contrario)
Symbol | Parameter | Test Conditions | Values | Unit |
VRRM | Maximum Repetitive Reverse Voltage | Tvj=125℃ | 800 | V |
VDRM | Maximum repetitive peak off-state voltage | |||
VRSM | Non-Repetitive Reverse Voltage | Tvj=125℃ | V | |
VDSM | Non-repetitive peak off-state voltage | 900 | ||
IRRM | Maximum Repetitive Reverse Current | Tvj=125℃ | 5 | mA |
IDRM | Maximum repetitive peak off-state Current | |||
IT(AV) | Mean On-state Current | TC=85℃ | 55 | |
IT(RMS) | RMS Current | TC=85℃, sin180° | 80 | A |
ITSM | Non Repetitive Surge Peak On-state Current | 10ms, Tj=25℃ | 1100 | |
I2t | For Fusing | 10ms, Tj=25℃ | 6050 | A2S |
VTM | Peak on-state voltage | ITM=150A | 1.7 | V |
dv/dt | critical rate of rise of off-state voltage | VD =2/3VDRM Gate Open Tj=125℃ | 1000 | V/us |
IGT | gate trigger current max. | 80 | mA | |
VGT | gate trigger voltage max. | 1.5 | V | |
IH | gate trigger current | 200 | mA | |
IL | latching current | 500 | mA | |
Viso | AC 50Hz RMS 1min | 2500 | V | |
TJ | Junction Temperature | -40 to +125 | ℃ | |
TSTG | Storage Temperature Range | -40 to +125 | ||
RthJC | Junction to Case Thermal Resistance(Per thyristor chip ) | 0.7 | ℃ /W | |
Torque | mounting force, Module to Sink | 2.5 | Nm | |
Tsolder | Teminals,10s | 260 | ℃ |
O UTLINES
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.