YZPST-BT151 Rectifierr controlado por silicio SCR 7.5A

SCRS

YZPST-BT151

YZPST-BT151 Rectifierr controlado por silicio SCR 7.5A

● Característica principal (TJJ = 2255 ℃)

Symbol	Value	Unit
IT(AV)	7.5	A
VDRM / VRRM	≥ 600	V
IGT	1 to 20	mA

● Calificaciones absolutas (valores limitantes)

Symbol	Parameter	Value	Unit
IT(RMS)	RMS on-state current (180°conduction angle)	12	A
IT(AV)	AV on-state current (180°conduction angle)	7.5	A
ITSM	Non repetitive surge peak on-state Current (tp=10ms)	100	A
I2t	(tp=10ms)	50	A2S
IGM	Peak gate current(tp=20us)	2	A
PGM	Peak gate power	5	W
PG(AV)	Average gate power	0.5	W
Tstg Tj	Storage temperature Operating junction temperature	-40--+150 -40--+125	℃

● Resistencias Thermai

Symbol	Parameter	Value	Unit
Rth (j-c)	Junction to case	1.3	K/W
Rth (j-a)	Junction to ambient	60	K/W

● Características eléctricas (TJ = 25 ℃ a menos que se indique lo contrario)

Symbol	Test Conditions		Value			Unit
			Min	Type	Max
IGT	VD=6V, RL=100Ω		1	5	20	uA
VGT	VD=12V, RL=100Ω		-----	0.7	0.8	V
VGD	VD=VDRM, RL=3.3KΩ Tj=110℃		0.2	-----	-----	V
IH	IT=100mA  Gate Open		-----	9	20	mA
dV/dt	VD=67%VDRM, GateOpen, Tj=125℃		50	125	-----	v/μs
VTM	IT=16A,tp=380μs		-----	-----	1.7	V
IDRM IRRM	VD=VDRM VR=VRRM	Tj=25℃	-----	-----	20	uA
		Tj=110℃	-----	-----	300	uA

● Medida del paquete (TO-220E)