TO20F BTA216X-600B TRIAC tiene un buen rendimiento en DV/DT y confiabilidad
$0.165000-49999 Piece/Pieces
$0.13≥50000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
Hafen: | SHANGHAI |
$0.165000-49999 Piece/Pieces
$0.13≥50000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
Hafen: | SHANGHAI |
Modelo: YZPST-BTA216X-600B
Marca: Yzpst
Lugar De Origen: porcelana
IT(RMS): 16A
VDRM: 600V
VRRM: 600V
I2t: 98A2S
Di/dt: 100A/μs
IGM: 2A
VGM: 5W
PGM: 5W
controladores.
PRINCIPALES CARACTERÍSTICAS
Symbol |
Value |
Unit |
IT(RMS) |
16 |
A |
VDRM/VRRM |
600 |
V |
IGT |
≤10 |
mA |
ÍNDICES ABSOLUTOS MÁXIMOS
Symbol | PARAMETER | Value | Unit | |
IT(RMS) | RMS on-state current(full sine wave) | TO-220.Non-Ins TC≤99℃ | 16 | A |
Non repetitive surge peak on-state current | t=20ms | 140 | ||
ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 150 | A |
I2t | I2t Value for fusing | t= 10ms | 98 | A2S |
di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
IGM | Peak gate current, | — | 2 | A |
VGM | Peak gate voltage | — | 5 | W |
PGM | Peak gate power | — | 5 | W |
PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
Tj | Operating junction temperature range | 125 | ℃ |
Características eléctricas (TJ = 25。C, a menos que se especifique lo contrario)
Características estáticas
Symbol | Parameter | Test Condition | Quadrant | Value | Unit | ||
MIN | TYPE | MAX | |||||
IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
VT | On-state voltage | IT=20A | - | 1.2 | 1.5 | V | |
IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | mA | |
Ⅰ-Ⅲ | - | - | 60 | mA | |||
IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA |
Características dinámicas
Symbol | Parameter | Test Condition | Value | Unit | |
MIN | TYPE | ||||
dVD/dt | Critical rate of rise of off- state voltage | VDM = 67% VDRM(max); Tj = 125 ˚C | 1000 | 4000 | V/us |
exponential waveform; gate open circuit | |||||
dIcom/dt | Critical rate of change of commutating current | VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16A; without snubber; gate open circuit | 28 | A/ms | |
T | Gate controlled turn-on time | ITM = 20 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs | 2 | us | |
tgt |
PAQUETE MECÁNICO DATOS
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