Capacidad de alta sobretensión 400A TG-C PAQUETE TRIAC TG25C60

Symbol

Item

Conditions

Ratings

Unit

IT RMS

R.M.S. On-State Current

Tc

25

A

ITSM

Surge On-State Current

One cycle, 50Hz/60Hz, peak, non-repetitive

300/330

A

I2t

I2t

Value for one cycle of surge current

450

A2S

PGM

Peak Gate Power Dissipation

10

W

PGAV

Average Gate Power Dissipation

1

W

IGM

Peak Gate Current

3

A

VGM

Peak Gate Voltage

10

V

di/dt

Critical Rate of Rise of On-State Current

IG=100mA,Tj=25   VD=1/2VDRM    dIG/dt=1A/μS

50

A/μS

Tj

Operating Junction Temperature

-25～+125

℃

Tstg

Storage Temperature

-40～+125

℃

VISO

Isolation Breakdown Voltage R.M.S.

A.C. 1 minute

2500

V

Mounting Torque M4

Recommended Value 1.0  ～1.4（10～14）

14

kgf.CM

Symbol

Item

Conditions

Ratings

Unit

IDRM

Reptitive Peak Off-State

Current, max

VD=VDRM, Single phase, half wave, Tj=125℃

5

mA

VTM

Peak On-State Voltage, max

On-State Current On-State Current √2X IT (RMS),Inst. measurement

1.4

V

I GT1 +

1

Gate Trigger Current, max

Tj =25℃, IT=1A, VD=6V

50

mA

I GT1 -

2

Tj =25℃, IT=1A, VD=6V

50

mA

I GT3 +

3

-

mA

I GT3 +

4

Tj =25℃, IT=1A, VD=6V

50

mA

V GT1+

1

Gate Trigger Voltage, max

Tj =25℃, IT=1A, VD=6V

3

V

V GT1-

2

Tj =25℃, IT=1A, VD=6V

3

V

V GT3+

3

-

V

V GT3-

4

Tj =25℃, IT=1A, VD=6V

3

VGD

Non-Trigger Gate Voltage, min

Tj =25℃,   VD= 1/2VRRM

0.2

V

tgt

Turn On Time, max.

IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25℃,dIG/dt=1A/μS

10

V

dv/dt

Critical Rate of Rise on-State

Voltage,min.

Tj=25℃,VD=2/3VDRM

Exoponential wave.

20

V/μS

(dv/dt) c

Critical Rate of Rise off-State

Voltage at commutation, min

Tj=25℃,VD=2/3VDRM

di/dtc=15A/μS

5

V/μS

IH

Holding Current, typ.

Tj =25℃

30

mA

Rth(j-c)

Thermal Impedance, max

Junction to case

1.5

℃/W