TO20F 800V BTA316X-800E 16A TRIAC
$0.164000-19999 Piece/Pieces
$0.14≥20000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
Hafen: | shanghai |
$0.164000-19999 Piece/Pieces
$0.14≥20000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
Hafen: | shanghai |
Modelo: YZPST-BTA316X-800E
Place Of Origin: China
IT(RMS): 16A
VDRM: 800V
VRRM: 800V
ITSM: 160A
I2t: 140A2S
IGM: 4A
VGM: 16V
PGM: 40W
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. trenza |
Descargar | : |
YZPST-BTA316X-800E
TO20F 800V BTA316X-800E 16A TRIAC
Paquete
A 220F
Característica principal (TJ = 25 ℃)
Symbol | Value | Unit |
IT(RMS) | 16 | A |
VDRM / VRRM | ≥800 | V |
ITSM | 160 | A |
Absoluto calificaciones ( limitantes Valores )
Symbol | Parameter | Value | Unit | |
IT (RMS) | Rms on-state current(full sine wave) | 16 | A | |
Non- repetitive Peak on-state | ||||
ITSM | Current (Tj=25℃,tp=20ms) | 160 | A | |
I2t | I2t for fusing(tp=10ms) | 140 | A2S | |
IGM | Peak gate current | 4 | A | |
VGM | Peak gate voltage | 16 | V | |
PGM | Peak gate power | 40 | W | |
PG(AV) | Average gate power | 1 | W | |
dIT/dt | Repetitive rate of rise of on-state current after triggering | Ⅰ- Ⅱ-Ⅲ | 50 | |
(IT=6A,IG =0.2A,dlG/dt=0.2A/us) | Ⅳ | 50 | A/μs | |
Tstg | Storage temperature | 110 | ℃ | |
Tj | Operating junction temperature | 85 |
Resistencias termoi
Symbol | Parameter | Condition | Type | Unit | |
Rth j-c | Thermal Resistance,Junction to case | One cycle | 220F | 1.2 | ℃/W |
Rth j-a | Thermal Resisatance,Junction to ambient | —— | —— | 60 | ℃/W |
Eléctrico características ( Tj = 25 ℃ a menos que de lo contrario declarado )
Symbol | Test Conditions | Type | Max | Unit | |
BTA316-800 | C | B | |||
VD=12V IT=0.1A | |||||
T2+ G+ | 11 | 16 | 25 | mA | |
IGT | T2+ G- | 12 | 20 | 30 | mA |
T2- G- | 18 | 25 | 50 | mA | |
T2- G+ | mA | ||||
IH | VD=12V IGT=0.1A | 25 | 50 | mA | |
VTM | IT=20A | — 1.3— | 1.7 | V | |
I DRM | V DRM=520V | 10 | μA | ||
IRRM | VRRM=520V | 15 | μA | ||
VD=12V IT=0.1A | |||||
VGT | Tj=125℃ | —— | 1.65 | V | |
VD=VDRM(MAX) | |||||
ID | Tj=125℃ | —— | 0.5 | mA |
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