Módulo IGBT
YZPST-450HFX170C6S
1700V/450A 2 en un paquete
Descripción general
El módulo de potencia de IGBT proporciona Ultra
Pérdida de baja conducción, así como la resistencia de cortocircuito.
Están diseñados para las aplicaciones como
Inversores generales y UPS.
Características
Tecnología IGBT de trinchera de baja VCE (SAT)
Capacidad de cortocircuito de 10 μs
VCE (SAT) con coeficiente de temperatura positiva
Temperatura máxima de unión 175oC
Caso de baja inductancia
Recuperación inversa rápida y suave FWD antiparalelo
Placa base de cobre aislada utilizando la tecnología DBC
Típico Aplicaciones
Inversor para motor
Amplificador de accionamiento de Servo AC y DC
Fuente de poder ininterrumpible
IGBT
|
Symbol
|
Description
|
Value
|
Unit
|
|
VCES
|
Collector-Emitter Voltage
|
1700
|
V
|
|
VGES
|
Gate-Emitter Voltage
|
±20
|
V
|
|
IC
|
Collector Current @ TC=25oC
@ TC= 100oC
|
706
450
|
A
|
|
ICM
|
Pulsed Collector Current tp=1ms
|
900
|
A
|
|
PD
|
 Maximum Power Dissipation @ T =175oC
|
2542
|
W
|
Diodo
|
Symbol
|
Description
|
Value
|
Unit
|
|
VRRM
|
Repetitive Peak Reverse Voltage
|
1700
|
V
|
|
IF
|
Diode Continuous Forward Current
|
450
|
A
|
|
IFM
|
Diode Maximum Forward Current tp=1ms
|
900
|
A
|
Módulo
|
Symbol
|
Description
|
Value
|
Unit
|
|
Tjmax
|
Maximum Junction Temperature
|
175
|
oC
|
|
Tjop
|
Operating Junction Temperature
|
-40 to +150
|
oC
|
|
TSTG
|
Storage Temperature Range
|
-40 to +125
|
oC
|
|
VISO
|
Isolation Voltage RMS,f=50Hz,t=1min
|
4000
|
V
|
IGBT Características Tc = 25oc a menos que se indique lo contrario
|
Symbol
|
Parameter
|
Test Conditions
|
Min.
|
Typ.
|
Max.
|
Unit
|
|
|
|
IC=450A,VGE=15V, Tj=25oC
|
|
1.85
|
2.2
|
|
|
|
|
|
|
VCE(sat)
|
Collector to Emitter
|
IC=450A,VGE=15V, Tj=125oC
|
|
2.25
|
|
V
|
|
|
Saturation Voltage
|
IC=450A,VGE=15V, Tj=150oC
|
|
2.35
|
|
|
|
VGE(th)
|
Gate-Emitter Threshold Voltage
|
IC= 18.0mA,VCE=VGE, Tj=25oC
|
5.6
|
6.2
|
6.8
|
V
|
|
ICES
|
Collector Cut-Off
|
VCE=VCES,VGE=0V,
|
|
|
5
|
mA
|
|
Current
|
Tj=25oC
|
|
IGES
|
Gate-Emitter Leakage Current
|
VGE=VGES,VCE=0V, Tj=25oC
|
|
|
400
|
nA
|
|
RGint
|
Internal Gate Resistance
|
|
|
1.67
|
|
Ω
|
|
Cies
|
Input Capacitance
|
VCE=25V,f=1MHz,
|
|
54.2
|
|
nF
|
|
Cres
|
Reverse Transfer
|
VGE=0V
|
|
1.32
|
|
nF
|
|
Capacitance
|
|
|
QG
|
Gate Charge
|
VGE=- 15…+15V
|
|
4.24
|
|
μC
|
|
td(on)
|
Turn-On Delay Time
|
|
|
179
|
|
ns
|
|
tr
|
Rise Time
|
|
|
105
|
|
ns
|
|
td(off)
|
Turn-Off Delay Time
|
VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC
|
|
680
|
|
ns
|
|
tf
|
Fall Time
|
|
|
375
|
|
ns
|
|
Eon
|
Turn-On Switching
|
|
|
116
|
|
mJ
|
|
Loss
|
|
|
Eoff
|
Turn-Off Switching
|
|
|
113
|
|
mJ
|
|
Loss
|
|
|
td(on)
|
Turn-On Delay Time
|
|
|
208
|
|
ns
|
|
tr
|
Rise Time
|
|
|
120
|
|
ns
|
|
td(off)
|
Turn-Off Delay Time
|
VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC
|
|
784
|
|
ns
|
|
tf
|
Fall Time
|
|
|
613
|
|
ns
|
|
Eon
|
Turn-On Switching
|
|
|
152
|
|
mJ
|
|
Loss
|
|
|
Eoff
|
Turn-Off Switching
|
|
|
171
|
|
mJ
|
|
Loss
|
|
|
td(on)
|
Turn-On Delay Time
|
|
|
208
|
|
ns
|
|
tr
|
Rise Time
|
|
|
120
|
|
ns
|
|
td(off)
|
Turn-Off Delay Time
|
VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC
|
|
800
|
|
ns
|
|
tf
|
Fall Time
|
|
|
720
|
|
ns
|
|
Eon
|
Turn-On Switching
|
|
|
167
|
|
mJ
|
|
Loss
|
|
|
Eoff
|
Turn-Off Switching
|
|
|
179
|
|
mJ
|
|
Loss
|
|
|
|
|
tP≤10μs,VGE=15V,
|
|
|
|
|
|
ISC
|
SC Data
|
Tj=150oC,VCC= 1000V, VCEM≤1700V
|
1800
|
A
|
Diodo Características Tc = 25oc a menos que se indique lo contrario
|
Symbol
|
Parameter
|
Test Conditions
|
Min.
|
Typ.
|
Max.
|
Unit
|
|
|
Diode Forward
|
IF=450A,VGE=0V,Tj=25oC
|
|
1.8
|
2.25
|
|
|
VF
|
Voltage
|
IF=450A,VGE=0V,Tj= 125oC
|
|
1.95
|
|
V
|
|
|
|
IF=450A,VGE=0V,Tj= 150oC
|
|
1.9
|
|
|
|
Qr
|
Recovered Charge
|
VR=900V,IF=450A,
|
|
105
|
|
μC
|
|
IRM
|
Peak Reverse
|
-di/dt=4580A/μs,VGE=- 15V Tj=25oC
|
|
198
|
|
A
|
|
Recovery Current
|
|
|
Erec
|
Reverse Recovery Energy
|
|
|
69
|
|
mJ
|
|
Qr
|
Recovered Charge
|
VR=900V,IF=450A,
|
|
187
|
|
μC
|
|
IRM
|
Peak Reverse
|
-di/dt=4580A/μs,VGE=- 15V Tj= 125oC
|
|
578
|
|
A
|
|
Recovery Current
|
|
|
Erec
|
Reverse Recovery Energy
|
|
|
129
|
|
mJ
|
|
Qr
|
Recovered Charge
|
VR=900V,IF=450A,
|
|
209
|
|
μC
|
|
IRM
|
Peak Reverse
|
-di/dt=4580A/μs,VGE=- 15V Tj= 150oC
|
|
585
|
|
A
|
|
Recovery Current
|
|
|
Erec
|
Reverse Recovery Energy
|
|
|
150
|
|
mJ
|
Dimensiones del paquete 
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