Módulo IGBT de 300A 1200V 1200V

YZPST-300HF120TK-G2

Módulo IGBT 300A 1200V

CARACTERISTICAS
Capacidad alta de cortocircuito, corriente de cortocircuito autodimitador
Chip IGBT (Tecnología de parada de campo+ Field)
VCE (SAT) con coeficiente de temperatura positiva
Conmutación rápida y corriente de cola corta, bajas pérdidas de conmutación
Diodos de ruedas libres con recuperación inversa rápida y suave
Sentido de temperatura incluido
Aplicaciones
Aplicación de conmutación de alta frecuencia
Aplicaciones médicas
MOVIMIENTO/CONTROL SERVO
Sistemas UPS

Máximo absoluto Calificaciones T c = 25 ° C a menos que lo contrario especificado

Symbol	Parameter	Test Conditions	Values	Unit
IGBT
VCES	Collector - Emitter Voltage	TVj=25°C	1250	V
VGES	Gate - Emitter Voltage		±30	V
IC	DC Collector Current	TC=25°C	450	A
		TC=80°C	300	A
ICM	Repetitive Peak Collector Current	tp=1ms	600	A
Ptot	Power Dissipation Per IGBT		2083	W
Diode
VRRM	Repetitive Reverse Voltage	TVj=25°C	1250	V
IF(AV)	Average Forward Current	TC=25°C	450	A
		TC=80°C	300	A
IFRM	Repetitive Peak Forward Current	tp=1ms	600	A

Características eléctricas y térmicas TC = 25 ° C a menos que se especifique lo contrario

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
IGBT
VGE(th)	Gate - Emitter Threshold Voltage	VCE=VGE, IC=2.0mA			5.0		6.8	V
VCE(sat)	Collector - Emitter	IC=300A, VGE=15V, TVj=25°C				2.2	2.6	V
	Saturation Voltage	IC=300A, VGE=15V, TVj=125°C				2.65		V
ICES	Collector Leakage Current	VCE=1250V, VGE=0V, TVj=25°C					1	mA
		VCE=1250V, VGE=0V, TVj=125°C					5	mA
Rgint	Integrated Gate Resistor	Per switch				5		Ω
IGES	Gate Leakage Current	VCE=0V,VGE±15V, TVj=125°C			-500		500	nA
Cies	Input Capacitance	VCE=25V, VGE=0V, f =1MHz				21.3		nF
Cres	Reverse Transfer Capacitance					1.42		nF
td(on)	Turn - on Delay Time	VCC=600V,IC=300A,		TVj =25°C		393		ns
		RG =3.3Ω,		TVj =125°C		395		ns
tr	Rise Time	VGE=±15V,		TVj =25°C		130		ns
		Inductive Load		TVj =125°C		135		ns
td(off)	Turn - off Delay Time	VCC=600V,IC=300A,		TVj =25°C		570		ns
		RG =3.3Ω,		TVj =125°C		600		ns
tf	Fall Time	VGE=±15V,		TVj =25°C		145		ns
		Inductive Load		TVj =125°C		155		ns
Eon	Turn - on Energy	VCC=600V,IC=300A,		TVj =25°C		7.7		mJ
		RG =3.3Ω,		TVj =125°C		14.5		mJ
Eoff	Turn - off Energy	VGE=±15V,		TVj =25°C		26.3		mJ
		Inductive Load		TVj =125°C		33.5		mJ
ISC	Short Circuit Current	tpsc≤10µS , VGE=15V TVj=125°C,VCC=900V				2100		A
RthJC	Junction-to-Case Thermal Resistance (Per IGBT)						0.07	K /W
Diode
VF	Forward Voltage	IF=300A , VGE=0V, TVj =25°C				1.82	2.25	V
		IF=300A , VGE=0V, TVj =125°C				2.0		V
Qrr	Reversed Charge	IF=300A , VR=600V				40		uC
IRRM	Max. Reverse Recovery Current	diF/dt=-2360A/μs				250		A
Erec	Reverse Recovery Energy	TVj =125°C				18.5		mJ
RthJCD	Junction-to-Case Thermal Resistance		(Per Diode)				0.12	K /W

Esquema del paquete