650V 100A Tecnología de parada de campo de trinchera IGBT
$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Modelo: YZPST-D100H065AT1S3
Lugar De Origen: porcelana
VCES: 650V
VGES: ±20V
VCEsat, Tvj=25: 1.75V
IC(TC=100℃ ): 100A
ICM: 200A
Tvjmax: 175 ℃
Package: TO247-3L
IC(TC=25℃): 125A
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. trenza |
Descargar | : |
Zanja Tecnología de parada de campo IGBT
YZPST-D100H065AT1S3
Características
650V, 100A
VCE (SAT) (Typ.) =1.75v@vge=15V, IC = 100A
Temperatura máxima de unión 175
Placas de plomo sin PB; RoHS
Aplicaciones
Convertidores solares
Suministro de energía ininterrumpida
Convertidores de soldadura
Convertidores de frecuencia de conmutación de rango medio a alto
Llave Rendimiento y P Ackage Parámetros
Order codes |
VCE |
IC |
VCEsat, Tvj=25 |
Tvjmax |
Marking |
Package |
D100H065AT1S3 |
650V |
100A |
1.75V |
175 ℃ |
D100H65AT1 |
TO247-3L |
Máximo absoluto Calificaciones
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage | 650 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Continuous Collector Current (TC=25 ℃ ) | 125 | A |
Continuous Collector Current (TC=100 ℃ ) | 100 | A | |
ICM | Pulsed Collector Current (Note 1) | 200 | A |
Diode Forward Current (TC=25 ℃ ) | 125 | A | |
IF | Diode Forward Current (TC=100 ℃ ) | 100 | A |
Maximum Power Dissipation (TC=25 ℃ ) | 385 | W | |
PD | Maximum Power Dissipation (TC=100 ℃ ) | 192 | W |
TJ | Operating Junction Temperature Range | -40 to 175 | ℃ |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
Eléctrico Características (TC = 25 a menos que se indique lo contrario).
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
BVCES | Collector-Emitter | VGE=0V, IC=200uA | 650 | V | ||
Breakdown Voltage | --- | --- | ||||
ICES | Collector-Emitter Leakage Current | VCE=650V, VGE=0V | 1 | mA | ||
--- | --- | |||||
Gate Leakage Current, Forward | VGE=20V, VCE=0V | 600 | nA | |||
--- | --- | |||||
IGES | Gate Leakage Current, Reverse | VGE=-20V, VCE=0V | 600 | nA | ||
--- | --- | |||||
VGE(th) | Gate Threshold Voltage | VGE=VCE , IC=750uA | 4.2 | --- | 6 | V |
VCE(sat) | Collector-Emitter | VGE=15V, IC=100A, Tj=25 ℃ | --- | 1.75 | 2.2 | V |
Saturation Voltage | VGE=15V, IC=100A, Tj=125 ℃ | --- | 2.05 | --- | V | |
td(on) | Turn-on Delay Time | --- | 35 | --- | ns | |
tr | Turn-on Rise Time | VCC=400V | --- | 155 | --- | ns |
td(off) | Turn-off Delay Time | VGE=±15V | --- | 188 | --- | ns |
tf | Turn-off Fall Time | IC=100A | --- | 69 | --- | ns |
Eon | Turn-on Switching Loss | RG=8 | --- | 4.35 | --- | mJ |
Eoff | Turn-off Switching Loss | Inductive Load | --- | 1.11 | --- | mJ |
Ets | Total Switching Loss | TC=25 ℃ | --- | 5.46 | --- | mJ |
Cies | Input Capacitance | VCE=25V | --- | 7435 | --- | pF |
Coes | Output Capacitance | VGE=0V | --- | 237 | --- | pF |
Cres | Reverse Transfer | f =1MHz | 128 | pF | ||
Capacitance | --- | --- |
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
IF=100A, Tj=25 ℃ | --- | 1.65 | 2.2 | V | ||
VF | Diode Forward Voltage | IF=100A, Tj=150 ℃ | --- | 1.4 | --- | V |
trr | Diode Reverse Recovery Time | 201 | ns | |||
VR=400V | --- | --- | ||||
IF=100A | ||||||
Irr | Diode peak Reverse | dIF/dt=200A/us | 19 | A | ||
Recovery Current | TC=25 ℃ | --- | --- | |||
Qrr | Diode Reverse Recovery Charge | 2.45 | uC | |||
--- | --- |
Nota 1 Calificación repetitiva, ancho de pulso limitado por la temperatura de unión máxima
Información del paquete
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.