25A YZPST-S2535 La serie SCRS es adecuada para adaptarse a todos los modos de control
$0.481000-4999 Piece/Pieces
$0.32≥5000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land |
Hafen: | SHANGHAI |
$0.481000-4999 Piece/Pieces
$0.32≥5000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land |
Hafen: | SHANGHAI |
Modelo: YZPST-S2535-12C
Marca: Yzpst
Lugar De Origen: porcelana
IT(RMS): 40A
VDRM: 1200V
VRRM: 1200V
IGT: 35mA
Tstg: -40 ~150℃
Tj: -40~125℃
VDSM: VDRM +100V
VRSM: VRRM +100V
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. trenza |
Descargar | : |
P/N: YZPST-S2535 Serie 25A SCRS
25A YZPST-S2535 La serie SCRS es adecuada para adaptarse a todos los modos de control
Descripción : _
Los tiristores pasivados en vidrio en una envoltura de plástico, la serie YZPST-S2535 SCRS es adecuada para adaptarse a todos los modos de control, que se encuentran en aplicaciones como la protección de la palanca de sobretensión, los circuitos de control de motor en herramientas eléctricas y ayudas de cocina, circuitos limitantes de corriente de corriente, ignición de descarga capacitiva, control de AC de softstart y circuitos de regulación de voltaje ...
Symbol |
Value |
Unit |
IT(RMS) |
40 |
A |
VDRM VRRM |
1200 |
V |
IGT |
35 |
mA |
Calificaciones máximas absolutas
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40 ~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (T =25℃) |
VDRM |
1200 |
V |
Repetitive peak reverse voltage (T =25℃) |
VRRM |
1200 |
V |
Non repetitive surge peak Off-state voltage |
VDSM |
VDRM +100 |
V |
Non repetitive peak reverse voltage |
VRSM |
VRRM +100 |
V |
RMS on-state current (T =100℃) |
IT(RMS) |
40 |
A |
Non repetitive surge peak on-state current |
ITSM |
350 |
A |
Average on-state current (180° conduction angle) |
IT(AV) |
25 |
A |
I2t value for fusing (tp=10ms) |
I2t |
450 |
A2S |
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) |
dI/dt |
150 |
A/μS |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Symbol |
Test Condition |
|
Value |
Unit |
IGT |
V =12V R =140Ω |
MAX. |
35 |
mA |
VGT |
MAX. |
1.3 |
V |
|
VGD |
VD=VDRM Tj=125℃ R=1KΩ |
MIN. |
0.2 |
V |
IL |
IG=1.2IGT |
MAX. |
75 |
mA |
IH |
IT=50mA |
MAX. |
50 |
mA |
dV/dt |
VD=2/3VDRM Gate Open Tj=125℃ |
MIN. |
500 |
V/μs |
Characterística estática _
Symbol | Parameter | Value(MAX.) | Unit | |
VTM | ITM =40A tp=380μs | Tj =25℃ | 1.65 | V |
IDRM | VD=VDRM VR=VRRM | Tj =25℃ | 500 | μA |
IRRM | Tj =125℃ | 6 | mA |
Symbol | Parameter | Value(MAX.) | Unit |
Rth(j-a) | junction to ambient(DC) | 60 | |
Rth(j-c) | Junction to case (DC) | 0.9 | ℃/W |
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