NPN Silicon Power Transistors MJE2955T Complementaria a MJE3055T
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | SHANGHAI |
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | SHANGHAI |
Modelo: YZPST-MJE2955T
Marca: Yzpst
VCBO: -70V
VCEO: -60V
VEBO: -5V
IC: -10A
PTOT: 75W
Tj: 150℃
Tstg: -55-150℃
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje de protección de plástico |
Descargar | : |
PNP Silicon Power Transistors MJE2955T
Description:
El MJE2955T es un transistor PNP, que es complementario a MJE3055T y se usa en circuitos de amplificación de potencia de audio y conversión de potencia.
Formulario de paquete: To-220
Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage |
-70 |
V |
VCEO |
Collector-Emitter Voltage |
-60 |
V |
VEBO |
Emitter-Base Voltage |
-5 |
V |
IC |
Continuous Collector Current |
-10 |
A |
PTOT |
Total dissipation at Tcase=25 ℃ |
75 |
W |
Tj |
Junction Temperature |
150 |
℃ |
Tstg |
Storage Temperature Range |
-55-150 |
℃ |
● Características eléctricas (TC = 25 ° C, a menos que lo contrario especificado)
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
Min |
Type |
Max |
||||
VCBO |
Collector-Base Breakdown Voltage |
IC= -10mA |
-70 |
|
|
V |
VCEO |
Collector-Emitter Breakdown Voltage |
IC= -200mA |
-60 |
|
|
V |
VEBO |
Emitter-Base Breakdown Voltage |
IE= -10mA |
- 5 |
|
|
V |
ICBO |
Collector Cutoff Current |
VCB= -70V |
|
|
1 |
mA |
IEBO |
Emitter Cutoff Current |
VEB= -5V |
|
|
5 |
mA |
hFE |
DC Current Gain |
IC= -4A,VCE= -4V |
20 |
|
100 |
|
VCE(sat) |
Collector-Base Breakdown Voltage |
IC= -4A,IB= -0.4A |
|
|
-1.1 |
V |
VBE(sat) |
Base-Emitter Saturation Voltage |
IC= -4A,IB= -4A |
|
|
-1.8 |
V |
fT |
Transition Frequency |
VCE=10V, IC=0.5A, f=1MHZ |
2 |
|
|
MHZ |
a:Pulse Test,tp ≤300us,δ≤2% |
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