$3501-9 Piece/Pieces
$250≥10Piece/Pieces
| Tipo de Pago: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| transporte: | Ocean,Air |
| Hafen: | SHANGHAI |
Modelo: YZPST-KP4350A1600V
Marca: Yzpst
VRRM: 1600V
VDRM: 1600V
I RRM /I DRM: 450A
I T(AV): 4350A
| Unidades de venta | : | Piece/Pieces |
| Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje de protección de plástico |
| Descargar | : |
|
Tiristor de alta potencia para aplicaciones de control de fase
YZPST-KP4350A1600V
Características:
. Toda la estructura difusa
. Configuración de la puerta de amplificación lineal
. Capacidad de bloqueo de hasta 16 00 voltios
. Tiempo de apagado máximo garantizado
. Alta capacidad DV/DT
. Dispositivo ensamblado por presión
Características y calificaciones eléctricas
Bloqueo - Estado fuera de
|
Device Type |
VRRM (1) |
VDRM (1) |
VRSM (1) |
|
KP4350A |
1600 |
1600 |
1700 |
V RRM = Voltaje reverso de pico repetitivo
V DRM = Pico repetitivo de voltaje de estado
V RSM = voltaje de reverso de pico no repetitivo (2)
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
450 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
300 V/msec |
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
4350 |
|
A |
Sinewave,180o conduction,TS=70oC |
|
Peak one cpstcle surge (non repetitive) current |
ITSM |
|
48900
|
|
A
|
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
11.9x106 |
|
A2s |
10.0 msec |
|
Latching current |
IL |
|
1000 |
|
mA |
VD = 12 V; RL= 12 ohms |
|
Holding current |
IH |
|
450 |
|
mA |
VD = 12 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
1.5 |
|
V |
ITM = 6000 A; Duty cpstcle £ 0.01% Tj = 25 oC |
|
Critical rate of rise of on-state current (5) |
di/dt |
|
200 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Ratero
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
15 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
30 |
300 200 125 |
|
mA mA mA |
VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12 V;RL = 6 ohms;Tj = +25 oC VD = 12 V;RL = 6 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 3
|
|
V V V |
VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12 V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
15 |
|
V |
|
Esquema de casos y dimensiones.
Número de Teléfono: 86-514-87782298
Whatsapp: +8613805278321
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Sitio Web: https://es.yzpst.com
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now