Tiristores de encapsulación de potencia de alta frecuencia DC
Obtener el último precioTipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Modelo: YZPST-T700123503BY
Marca: Yzpst
Tiristores de control de fase
YZPST-T700123503by
Características de los tiristores de control de fase: configuración de la puerta de amplificación central, encapsulación unida por compresión, alta capacidad de DV/DT y tipo de perno, pulgada de rosca o métrica. Las aplicaciones típicas de los tiristores de alta frecuencia son la conmutación de alimentación media y las alimentaciones de CC.
Calificaciones y características máximas
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
ON-STATE |
|
|
|
||
ITAV |
Mean on-state current |
350 |
A |
Sinewave,180° conduction,Tc=85℃ |
|
ITRMS |
RMS value of on-state current |
550 |
A |
Nominal value |
|
ITSM |
Peak one cycle surge (non repetitive) current |
9.1 |
KA |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I2t |
I square t |
416 |
KA2s |
8.3 msec and 10.0 msec |
|
IL |
Latching current |
- |
mA |
VD = 24 V; RL= 12 ohms |
|
IH |
Holding current |
- |
mA |
VD = 24 V; I = 2.5 A |
|
VTM |
Peak on-state voltage |
1.4 |
V |
ITM = 625 A; Duty cycle £ 0.01%
|
|
di/dt |
Critical rate of rise of on-state current |
non-repetitive |
800 |
A/ms |
Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive |
150 |
||||
BLOCKING |
|
|
|
||
VDRM VRRM |
Repetitive peak off state voltage Repetitive peak reverse voltage |
1200 |
V |
|
|
VDSM VRSM |
Non repetitive peak off state voltage Non repetitive peak reverse voltage |
1300 |
V |
|
|
IDRM IRRM |
Repetitive peak off state current Repetitive peak reverse current |
30 |
mA |
Tj = 125 oC ,VRRM VDRM applied |
|
dV/dt |
Critical rate of voltage rise |
1000 |
V/ms |
TJ=TJmax, linear to 80% rated VDRM |
|
TRIGGEING |
|
|
|
||
PG(AV) |
Average gate power dissipation |
3 |
W |
|
|
PGM |
Peak gate power dissipation |
16 |
W |
|
|
IGM |
Peak gate current |
- |
A |
|
|
IGT |
Gate trigger current |
150 |
mA |
TC = 25 oC |
|
VGT |
Gate trigger voltage |
3.0 |
V |
TC = 25 oC |
|
VGD |
Gate non-trigger voltage |
0.15 |
V |
Tj = 125 oC |
|
SWITCHING |
|
|
|
||
tq |
Turn-off time |
150 |
ms |
ITM=550A, TJ=TJmax, di/dt=40A/μs, VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs |
td |
Delay time |
- |
|
Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC |
Qrr |
Reverse recovery charge |
- |
|
|
Térmico y mecánico
Symbol |
Parameter |
Values |
Units |
Test Conditions |
Tj |
Operating temperature |
-40~125 |
oC |
|
Tstg |
Storage temperature |
-40~150 |
oC |
|
R th (j-c) |
Thermal resistance - junction to case |
0.1 |
oC/W |
DC operation ,Single sided cooled |
R th (c-s) |
Thermal resistance - case to sink |
0.05 |
oC/W |
Single sided cooled |
P |
Mounting force |
3.5 |
Nm |
|
W |
Weight |
- |
g |
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