Caso de baja inductancia 600HFX170C6S 1700V 600A Módulo IGBT
$1905-99 Piece/Pieces
$140≥100Piece/Pieces
Tipo de Pago: | L/C,Paypal,T/T |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
Hafen: | SHANGHAI |
$1905-99 Piece/Pieces
$140≥100Piece/Pieces
Tipo de Pago: | L/C,Paypal,T/T |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
Hafen: | SHANGHAI |
Modelo: YZPST-600HFX170C6S
Marca: Yzpst
Lugar De Origen: porcelana
VCES: 1700V
VGES: ±20V
ICM: 1200A
PD: 4166W
VRRM: 1700V
IF: 600A
IFM: 1200A
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. trenza |
Ejemplo de una imagen | : | |
Descargar | : |
1700V/600A 2 en un paquete
Descripción general
El módulo de potencia de IGBT proporciona Ultra
Pérdida de baja conducción, así como la resistencia de cortocircuito.
Están diseñados para las aplicaciones como
Inversores generales y UPS.
Características
. Tecnología IGBT de trinchera de baja VCE (SAT)
. Capacidad de cortocircuito de 10 μs
. VCE (SAT) con coeficiente de temperatura positiva
. Temperatura máxima de unión 175oC
. Caso de baja inductancia
. Recuperación inversa rápida y suave FWD antiparalelo
. Placa base de cobre aislada utilizando la tecnología DBC
Aplicaciones Típicas
. Inversor para motor
. Amplificador de accionamiento de Servo AC y DC
. Fuente de poder ininterrumpible
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current TC=25oC TC= 100oC |
1069 600 |
A |
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
PD |
Maximum Power Dissipation T =175oC |
4166 |
W |
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
600 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Características Tc = 25oc a menos que se indique lo contrario
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
IC=600A,VGE=15V, Tj=25oC | 1.85 | 2.2 | ||||
VCE(sat) | Collector to Emitter | IC=600A,VGE=15V, Tj=125oC | 2.25 | V | ||
Saturation Voltage | IC=600A,VGE=15V, Tj=150oC | 2.35 | ||||
VGE(th) | Gate-Emitter Threshold Voltage | IC= 12.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
ICES | Collector Cut-Off | VCE=VCES,VGE=0V, | 5 | mA | ||
Current | Tj=25oC | |||||
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC | 400 | nA | ||
RGint | Internal Gate Resistance | 1.3 | Ω | |||
Cies | Input Capacitance | VCE=25V,f=1MHz, | 72.3 | nF | ||
Cres | Reverse Transfer | VGE=0V | 1.75 | nF | ||
Capacitance | ||||||
QG | Gate Charge | VGE=- 15…+15V | 5.66 | μC | ||
td(on) | Turn-On Delay Time | 170 | ns | |||
tr | Rise Time | 67 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj=25oC | 527 | ns | ||
tf | Fall Time | 138 | ns | |||
Eon | Turn-On Switching | 154 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 132 | mJ | |||
Loss | ||||||
td(on) | Turn-On Delay Time | 168 | ns | |||
tr | Rise Time | 80 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 125oC | 619 | ns | ||
tf | Fall Time | 196 | ns | |||
Eon | Turn-On Switching | 236 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 198 | mJ | |||
Loss | ||||||
td(on) | Turn-On Delay Time | 192 | ns | |||
tr | Rise Time | 80 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 150oC | 640 | ns | ||
tf | Fall Time | 216 | ns | |||
Eon | Turn-On Switching | 259 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 215 | mJ | |||
Loss | ||||||
tP≤10μs,VGE=15V, | ||||||
ISC | SC Data | Tj=150oC,VCC= 1000V, VCEM≤1700V | 2400 | A |
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