La serie 20A S2035 SCRS es adecuada para adaptarse a todos los modos de control
$0.135000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express |
Hafen: | SHANGHAI |
$0.135000-49999 Piece/Pieces
$0.1≥50000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express |
Hafen: | SHANGHAI |
Modelo: YZPST-S2035
Marca: Yzpst
Lugar De Origen: porcelana
IT(RMS): 31A
VDRM: 1200V
VRRM: 1200V
IGT: 35mA
Tstg: -40 ~150℃
Tj: -40 ~125℃
VDSM: 1300V
VRSM: 1300V
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. trenza |
Ejemplo de una imagen | : | |
Descargar | : |
YZPST-S2035
20 A SCR S
DESCRIPCIÓN:
Tiristores pasados por vidrio En una envoltura de plástico, la serie S2035 SCRS es adecuada para adaptarse a todos los modos de control, que se encuentran en aplicaciones como la protección de la palanca de sobrevoltaje, los circuitos de control del motor en herramientas eléctricas y ayudas de cocina, circuitos limitantes de corriente, encendido de descarga capacitiva, AC suave control de motores y circuitos de regulación de voltaje ...
PRINCIPALES CARACTERÍSTICAS
Symbol |
Value |
Unit |
IT(RMS) |
31 |
A |
VDRM VRRM |
1200 |
V |
IGT |
35 |
mA |
ÍNDICES ABSOLUTOS MÁXIMOS
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40 ~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (T =25℃) |
VDRM |
1200 |
V |
Repetitive peak reverse voltage (T =25℃) |
VRRM |
1200 |
V |
Non repetitive surge peak Off-state voltage |
VDSM |
VDRM +100 |
V |
Non repetitive peak reverse voltage |
VRSM |
VRRM +100 |
V |
RMS on-state current (T =100℃) |
IT(RMS) |
31 |
A |
Non repetitive surge peak on-state current
|
ITSM |
300 |
A |
Average on-state current (180° conduction angle) |
IT(AV) |
20 |
A |
I2t value for fusing (tp=10ms) |
I2t |
450 |
A2S |
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) |
dI/dt |
50 |
A/μS |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Características eléctricas (t = 25 ℃ a menos que se especifique lo contrario)
Symbol |
Test Condition |
|
Value |
Unit |
IGT |
V =12V R =140Ω |
MAX. |
35 |
mA |
VGT |
MAX. |
1.3 |
V |
|
VGD |
VD=VDRM Tj=125℃ R=1KΩ |
MIN. |
0.2 |
V |
IL |
IG=1.2IGT |
MAX. |
75 |
mA |
IH |
IT=50mA |
MAX. |
50 |
mA |
dV/dt |
VD=2/3VDRM Gate Open Tj=125℃ |
MIN. |
500 |
V/μs |
Características estáticas
Symbol |
Parameter |
Value(MAX.) |
Unit |
|
VTM |
ITM =40A tp=380μs |
Tj =25℃ |
1.65 |
V |
IDRM |
VD=VDRM VR=VRRM
|
Tj =25℃ |
20 |
μA |
IRRM |
Tj =125℃ |
4 |
mA |
Resistencia térmica
Symbol |
Parameter |
Value(MAX.) |
Unit |
Rth(j-a) |
junction to ambient(DC) |
60 |
℃/W |
Rth(j-c) |
Junction to case (DC) |
1.0 |
Datos mecánicos del paquete TO20 M1
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