$2502-9 Piece/Pieces
$210≥10Piece/Pieces
| Tipo de Pago: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| transporte: | Ocean,Land,Express,Others |
| Hafen: | SHANGHAI |
Modelo: YZPST-KP1000A6500V
Marca: Yzpst
Place Of Origin: China
VRRM: 6500V
VDRM: 6500V
IRRM: 40 mA
IDRM: 200mA
DV/dt: 1000 V/μsec
IT(AV): 1000A
ITRMS: 1650A
| Unidades de venta | : | Piece/Pieces |
| Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. trenza |
| Descargar | : |
|
P/N: YZPST-KP1000A/6500V
Tiristo de alta potencia para FASE CONTROL Aplicaciones
Características:
. Todo Estructura difusa
. Center amplificando la configuración GA TE
. Garantizado Tiempo de apagado máximo
. DV/DT alto Capacidad
. Presión ensamblada Dispositivo _
Bloqueo - Fuera del estado
|
VRRM ( 1) |
V DRM ( 1) |
VRSM ( 1) |
|
6500 |
6500 |
6600 |
VRRM = Voltaje reverso de pico repetitivo
VDRM = Pico repetitivo de voltaje de estado
VRSM = voltaje de reverso de pico no repetitivo (2)
Notas:
Todas las calificaciones se especifican para TJ = 25 OC a menos que
se indique lo contrario.
(1) Todas las clasificaciones de voltaje se especifican para una forma de onda sinusoidal aplicada de 50Hz/60ZHz sobre la
Rango de temperatura -40 a +125 OC.
(2) 10 ms. Max. ancho de pulso
(3) Valor máximo para TJ = 125 OC.
(4) Valor mínimo para lineal y exponencial
Waveshape a 80% calificó VDRM. Puerta abierta.
TJ = 125 OC.
(5) valor no repetitivo.
(6) El valor de DI/DT se establece en
De acuerdo con EIA/NIMA Standard RS-397, Sección 5-2-2-6. El valor definido sería además del obtenido de un circuito desinfesado, que comprende un condensador de 0.2 μF y una resistencia de 20 ohmios en paralelo con el thristor
bajo prueba.
|
Repetitive peak reverse leakage and off state |
IRRM / IDRM |
40 mA 200mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
1000 V/μsec |
Conducción - en estado
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Max. Average value of on-state current | IT(AV) | 1000 | A | Sinewave, 180o conduction TC=70 oC | ||
| RMS value of on-state current | ITRMS | 1650 | A | Nominal value | ||
| Peak one cpstcle surge | ITSM | 18 | kA | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
| (non repetitive) current | ||||||
| I square t | I2t | 1620 | kA2s | |||
| Latching current | IL | 1500 | mA | VD = 24 V; RL= 12 ohms | ||
| Holding current | IH | 500 | mA | VD = 24 V; I = 2.5 A | ||
| Peak on-state voltage | VTM | 2.65 | V | ITM = 1000A; Tvj= 125℃ | ||
| Threshold voltage | VTo | 1.24 | V | Tvj= 125℃ | ||
| Slope resistance | rT | 1.01 | mΩ | Tvj= 125℃ | ||
| Critical rate of rise of on-state current (5, 6) | di/dt | 500 | A/μs | Switching from VDRM < 1500 V, | ||
| non-repetitive | ||||||
| Critical rate of rise of on-state current (6) | di/dt | - | A/μs | Switching from VDRM < 3500 V |
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
50 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
10 |
|
W |
|
|
Peak gate current |
IGM |
|
10 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
400 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units |
VGT |
|
- 2.6 - |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0- 125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
10 |
|
V |
|
Dinámica
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
td |
|
- |
|
μs |
ITM = 1000 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0. 1 μs; tp = 20 μs |
|
Turn-off time (with VR = -50 V) |
tq |
|
700 |
|
μs |
ITM = 1000 A; di/dt = 1A/μs; VR > 200 V; Re-applied dV/dt = 20 V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Duty cpstcle > 0.01% |
|
Reverse recovery charge |
Qrr |
|
- |
|
μAs |
ITM = 2000 A; di/dt = 1.5 A/μs; VR > 200V |
Esquema de casos y Dimenses .
Número de Teléfono: 86-514-87782298
Whatsapp: +8613805278321
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Sitio Web: https://es.yzpst.com
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now