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Circuito de control de fase de potencia del tiristor KK1275A
Circuito de control de fase de potencia del tiristor KK1275A
Circuito de control de fase de potencia del tiristor KK1275A

Circuito de control de fase de potencia del tiristor KK1275A

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Atributos del producto

ModeloYZPST-KK1275A2100V

MarcaYZPST

Descripción

Inversor de tiristor de alta potencia

YZPST-KK1275A2100V

TIRISTOR DE ALTA POTENCIA R395CH21 PARA APLICACIONES DE CONTROL DE FASE


Características: capacidad de bloqueo de hasta 2100 voltios, estructura difusa . Alta capacidad dV / dt . Configuración de compuerta amplificadora central . Dispositivo ensamblado a presión, tiempo máximo de apagado garantizado


High Power Thyristor Inverter YZPST-KK1275A2100V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1275

 

A

Sinewave,180o conduction,Tc=80oC

RMS value of on-state current

ITRMS

 

1570

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

 

ITSM

 

-

 

15500

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.2x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

1000

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

500

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.9

 

V

ITM = 2000 A; Duty Cycle £0.01%; Tj =125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

 

200

 

A/ms

Switching from VDRM£ 1000 V,non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

100

 

A/ms

Switching from VDRM£ 1000 V


CARACTERÍSTICAS ELÉCTRICAS Y CLASIFICACIONES


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

-

150

-

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

-

3.0

-

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;Tj = + 125 oC

Peak negative voltage

VGRM

 

5

 

V

 


Dinámica

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

1.5

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

-

60

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V

* Para un máximo garantizado valor, póngase en contacto con la fábrica.


CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+125

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.024

0.048

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

-

-

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

19

26.7

 

kN

 

Weight

W

 

 

460

g

About


* Superficies de montaje lisas, planas y engrasadas

Nota: para el contorno y las dimensiones del caso, vea el dibujo del esquema del caso en la página 3 de esta Información técnica


Dibujo de esquema

High Power Thyristor Inverter YZPST-KK1275A2100V

KK1275A2100V Thyristor Phase Control Circuit

High Power Thyristor Inverter YZPST-KK1275A2100V


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