Diodo de recuperación de espárragos de 800 V para unidades de alta potencia

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

V_RRM

1600

-

V

Non repetitive peak reverse voltage

V_RSM

1700

-

V

Max. average forward current

I_F(AV)

165

-

A

Sinewave,180^o conduction,T_c=100^oC

Max. RMS forward current

I_F(RMS)

260

-

A

Nominal value; T_c=100^oC

Max. peak, one-cycle forward,

non-repetitive surge current

I_FSM

2500

-

A

10.0 msec (50Hz), half sinewave,

T_j = 25 ^oC, V_RM = 0.6V_RRM

Maximum I²t for fusing

I²t

31000

-

A²s

Max. forward voltage drop

V_F

1.5

V

I_F = 500A; T_c=25^oC

Threshold voltage

V_F0

0.85

V

T_j=180°C

slope resistance

r_T

1.3

mΩ

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+180

^oC

Storage temperature

T_stg

-50

+180

^oC

Reverse recovery charge

Q_rr

-

μc

Thermal resistance - junction to case

R_{Q (j-c)}

-

-

0.35

K/W

Thermal resistamce - case to heatsink

R_{Q (c-s)}

-

-

0.08

K/W

Mounting force

P

10

Nm

± 20%

Weight

W

-

-

-

g

Case style

-

See Outline Table