Diodo Stud de recuperación 2000V
$1.351-199 Bag/Bags
$0.95≥200Bag/Bags
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Cantidad de pedido mínima: | 1 Bag/Bags |
transporte: | Ocean,Air |
Hafen: | SHANGHAI |
$1.351-199 Bag/Bags
$0.95≥200Bag/Bags
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Cantidad de pedido mínima: | 1 Bag/Bags |
transporte: | Ocean,Air |
Hafen: | SHANGHAI |
Modelo: YZPST-SM40HF200
Marca: YZPST
Unidades de venta | : | Bag/Bags |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico |
DIODOS DE RECUPERACIÓN ESTÁNDAR Versión Stud
YZPST-SM40HF200
DIODOS DE RECUPERACION ESTANDAR
caracteristicas:
Alta capacidad de carga de corriente
Calificaciones de alta tensión hasta 2000V
Capacidades de alta corriente de sobrecarga
Versión de cátodo y vástago de ánodo.
Aplicaciones Típicas
Convertidores
Unidades de alta potencia
Fuentes de alimentación
Controles de maquina herramienta
Aplicaciones de tracción media. Fuentes de alimentación.
Parameters |
SM40HF.. |
Units |
|||
|
40 |
A |
|
||
@ TC |
90 |
°C |
|
||
IF(RMS) |
62 |
A |
|||
@ 50Hz |
570 |
A |
|
||
@ 60Hz |
590 |
A |
|
||
@ 50Hz |
1600 |
A2S |
|
||
@ 60Hz |
1450 |
A2S |
|
||
VRRM range |
400 to 2000 |
V |
|||
TJ |
-40 to 160 |
°C |
ESPECIFICACIONES ELECTRICAS
Clasificaciones de voltaje
Type number |
Voltage
Code |
V RRM, maximum repetitive peakreverse voltage V |
V RSM , maximumnon- repetitive peakrev. voltage V |
I RRM max. @ T J = T Jmax. mA |
SM40HF.. |
40 |
400 |
500 |
30 |
80 |
800 |
900 |
||
120 |
1200 |
1300 |
||
140 |
1400 |
1500 |
||
160 |
1600 |
1700 |
||
200 |
2000 |
2100 |
Conducción hacia adelante
Parameter |
SM40HF.. |
Units |
Conditions |
||
I F(AV) Max. average forwardcurrent
@ Case temperature |
40 |
A |
180° conduction, half sine wave |
||
90 |
°C |
||||
IF(RMS) Max. RMS forwardcurrent |
62 |
A |
DC @ TC = 75°C (04 to 20), TC = 36°C(25 to 32) |
||
I FSM, Maximum peak, one-cycleforward, non-repetitive surgecurrent |
570 |
A |
t = 10ms |
No voltage reapplied |
Sinusoidal half wave, Initial T = Tmax. |
590 |
t = 8.3ms |
||||
480 |
t = 10ms |
100% VRRM
reapplied |
|||
500 |
t = 8.3ms |
||||
I 2 t Maximum I 2 t for fusing |
1600 |
A 2 s |
t = 10ms |
No voltage reapplied |
|
1450 |
t = 8.3ms |
||||
1150 |
t = 10ms |
100% VRRM
reapplied |
|||
1050 |
t = 8.3ms |
||||
I2√t Maximum I2√t for fusing |
16000 |
A2√s |
t = 0.1 to 10ms, no voltage reapplied |
||
VF(TO) Low level value of thresholdvoltage |
0.65 |
V |
TJ = 200°C |
||
rf Max. value of forward sloperesistance |
4.30 |
mΩ |
|||
VFM Max. forward voltagedrop |
1.30 |
V |
(IFM x π x IF(AV) (125A peak), TJ = 25°C |
Especificaciones hermales y mecánicas.
Parameter |
SM40HF.. |
Units |
Conditions |
T J |
- 40 to 150 |
°C |
|
Tstg |
- 40 to 150 |
|
|
R thJC Thermal Impedance, max. |
0.95 |
K/W |
DC operation |
RthCS Max. thermal resistance, caseto
heatsink |
0.25 |
|
Mounting surface, smooth, flat andgreased |
T Max. allowed mounting torque+0 -20% |
3.5 |
Nm |
Not lubricated threads |
2.3 |
Lubricated threads |
||
wt Approximate weight |
17 |
g |
|
Case style |
DO-203AB (DO-5) |
See Outline Table |
Tabla de información para pedidos
Código del dispositivo
SM |
40 |
HF |
R |
100 |
M |
1 |
2 |
3 |
4 5 6 |
1 - Código de empresa
2 - Corriente promedio hacia adelante: I FAV
3 - Diodo
4 - Ninguno = Polaridad normal del perno prisionero (cátodo a espárrago)
- R = Stud Reverse Polari t y (Ánodo a Stud)
5 Código de voltaje: Código x 100 = VRRM
6 Ninguno = Base del espárrago DO-203AB (DO-5) 1/4 "28UNF-2A M = Base del espárrago DO-203AB (DO-5) M6X1
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