Niveles de activación altamente sensibles X0405 SCR
$0.11≥1000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Cantidad de pedido mínima: | 1000 Piece/Pieces |
transporte: | Ocean,Air |
Hafen: | Shanghai |
$0.11≥1000Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Cantidad de pedido mínima: | 1000 Piece/Pieces |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Modelo: YZPST-X0405
Marca: YZPST
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico |
Rectificador controlado de silicio (SCR)
YZPST-X0405
DESCRIPCIÓN:
Gracias a los niveles de activación altamente sensibles, el
La serie X0405 SCR es adecuada para todas las aplicaciones
donde la corriente de puerta disponible es limitada, como
interruptores de circuito de falla a tierra, sobrevoltaje
protección de palanca en fuentes de baja potencia,
circuitos de encendido capacitivo, ...
PRINCIPALES CARACTERÍSTICAS
Symbol |
Value |
Unit |
IT(RMS) |
4.0 |
A |
VDRM VRRM |
600 |
V |
IGT |
200 |
µA |
Parameter |
Symbol |
Value |
Unit |
Storage junctiontemperature range |
Tstg |
-40 ~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (T =25℃) |
VDRM |
600 |
V |
Repetitive peak reverse voltage (T =25℃) |
VRRM |
600 |
V |
Non repetitive surge peak Off-state voltage |
VDSM |
VDRM +100 |
V |
Non repetitive peak reverse voltage |
VRSM |
VRRM +100 |
V |
RMS on-state current (T =60℃) |
IT(RMS) |
4.0 |
A |
Non repetitive surge peak on-state current (180° conduction angle, F=50Hz) |
ITSM |
30 |
A |
Average on-state current (180° conduction angle) |
IT(AV) |
2.5 |
A |
I2t value for fusing (tp=10ms) |
I2t |
4.5 |
A2S |
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) |
dI/dt |
50 |
A/μS |
Peak gate current |
IGM |
1.2 |
A |
Average gate power dissipation |
PG(AV) |
0.2 |
W |
CARACTERÍSTICAS ELÉCTRICAS (T = 25 ℃ a menos que se especifique lo contrario)
Symbol |
Test Condition |
|
Value |
Unit |
IGT |
V =12V R =140Ω |
MAX. |
200 |
µA |
VGT |
MAX. |
0.8 |
V |
|
VGD |
VD=VDRM Tj=125℃ R=1KΩ |
MIN. |
0.1 |
V |
IL |
IG=1.2IGT |
MAX. |
6 |
mA |
IH |
IT=50mA |
MAX. |
5 |
mA |
dV/dt |
VD=2/3VDRM Gate Open Tj=125℃ |
MIN. |
15 |
V/μs |
CARACTERÍSTICAS ESTÁTICAS
Symbol |
Parameter |
Value(MAX.) |
Unit |
|
VTM |
ITM =8.0A tp=380μs |
Tj =25℃ |
1.8 |
V |
IDRM |
VD=VDRM VR=VRRM
|
Tj =25℃ |
5 |
μA |
IRRM |
Tj =125℃ |
1 |
mA |
Resistencias Termales
Symbol |
Parameter |
Value(MAX.) |
Unit |
Rth(j-a) |
junction to ambient |
60 |
℃/W |
Rth(j-t) |
Junction to tab (DC) |
20 |
Esquema de información de pedido
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