Tiristor conductor inverso 2000V
$360≥20Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Cantidad de pedido mínima: | 20 Piece/Pieces |
transporte: | Ocean,Air |
Hafen: | Shanghai |
$360≥20Piece/Pieces
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Cantidad de pedido mínima: | 20 Piece/Pieces |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Modelo: YZPST-KT40BT-5STR03T2040
Marca: YZPST
Unidades de venta | : | Piece/Pieces |
Tipo de paquete | : | 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico |
TIRISTORES DE CONDUCTA INVERSA
YZPST-KT40BT-5STR03T2040
caracteristicas:
. Diodo de rueda libre integrado
. Optimizado para bajas pérdidas dinámicas.
Bloqueo - Estado apagado
VRRM (1) |
VDRM (1) |
VRSM (1) |
2000 |
2000 |
2100 |
V RRM = Voltaje de reversa pico repetitivo
V DRM = Voltaje repetitivo de estado pico apagado
V RSM = Voltaje máximo inverso no repetitivo (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
10 mA 70 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Notas:
Todas las calificaciones se especifican para Tj = 25 oC a menos que se indique lo contrario.
(1) Todas las clasificaciones de voltaje se especifican para un aplicado
Forma de onda sinusoidal de 50Hz / 60zHz sobre la
Rango de temperatura de -40 a +125 oC.
(2) 10 mseg. max. ancho de pulso
(3) Valor máximo para Tj = 125 oC.
(4) Valor mínimo para forma de onda lineal y exponencial a 80% VDRM nominal. Puerta abierta. Tj = 125 oC.
(5) Valor no repetitivo.
(6) El valor de di / dt se establece de acuerdo con la norma EIA / NIMA RS-397, Sección 5-2-2-6. El valor definido sería además del obtenido de un circuito ubber, que comprende un condensador de 0.2 F y una resistencia de 20 ohmios en paralelo con el tiristor bajo prueba.
Conduciendo - en estado
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M IF(AV)M |
|
360 223 |
|
A |
Sinewave,180o conduction,Tc=70oC |
RMS value of on-state current |
ITRMS |
|
566 351 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM
IFSM |
|
5000
3500 |
|
A
A |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
125x103 61x103 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
500 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
100 |
|
mA |
VD = 24 V; I =2.5 A |
Peak on-state voltage |
VTM VFM |
|
2.61 3.42 |
|
V |
ITM = 1000 A |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
- |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
400 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
- |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
25 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
400 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
Gate voltage required to trigger all units |
VGT |
|
2.5 |
|
V |
VD = 10 V;IT=3A;Tj = +25 oC |
Peak negative voltage |
VRGM |
|
2 |
|
V |
|
Dinámica
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
tgd |
|
1.0 |
|
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time |
tgt |
|
- |
|
|
|
Turn-off time (with VR = -5 V) |
tq |
|
40 |
- |
ms |
ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
CARACTERÍSTICAS Y CLASIFICACIÓN TÉRMICA Y MECÁNICA
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+120 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c)
RQ (j-c)D |
|
55 140 88 165 |
|
K/kW |
Double sided cooled Single sided cooled Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
10 20 |
|
K/kW |
Double sided cooled * Single sided cooled * |
Mounting force |
F |
8 |
12 |
- |
kN |
|
Weight |
W |
|
|
- |
Kg |
|
* Superficies de montaje lisas, planas y engrasadas.
Nota: para el esquema y las dimensiones del caso, consulte el dibujo del esquema en la página 3 de esta Información técnica
Sym |
A |
B |
C |
D |
H |
mm |
59 |
34 |
53 |
3.5×3 |
20±1 |
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