YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Inicio> Lista de Productos> Dispositivos de disco de semiconductores (tipo de cápsula)> Control de fase tiristor> Control de potencia tiristor 6500V hvdc tiristor KP1500
Control de potencia tiristor 6500V hvdc tiristor KP1500
Control de potencia tiristor 6500V hvdc tiristor KP1500
Control de potencia tiristor 6500V hvdc tiristor KP1500

Control de potencia tiristor 6500V hvdc tiristor KP1500

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Tipo de Pago:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
transporte:Ocean,Air
Hafen:Shanghai
Atributos del producto

ModeloYZPST-KP1500A6500V-1

MarcaYZPST

Embalaje y entrega
Tipo de paquete : 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico
Descripción

Tiristores de control de potencia

YZPST-KP1500A6500V

Control de potencia tiristor 6500V hvdc tiristor KP1500

Características: Spoke Amplifying Gate Configuration. Alta capacidad dV / dt. Toda la estructura difusa. Dispositivo ensamblado a presión.


Power Control Thyristor

Conduciendo - en estado


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

 1500


A

Sinewave,180o conduction,Tc=70oC

RMS value of on-state current

ITRMS

 

  2800


A

Nominal value

Peak one cpstcle surge

(non repetitive) current

 

ITSM

 

30000


27000

 

A


A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

10x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

    1500

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

     250

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


2.20


V

ITM = 3000 A

Critical rate of rise of on-state

current (5)

di/dt


      300


A/ms

Switching from VDRM£ 800 V,

non-repetitive

Critical rate of rise of on-state

current

di/dt


      100


A/ms

Switching from VDRM£ 800 V



Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200


W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W


Peak gate current

IGM

 

20

 

A


Gate current

IGT

 

300 

 

mA


Gate voltage

VGT

0.30

3.5 

 

V



Dinámica


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 



ms


Turn-off time (with VR = -50 V)

tq

 



 

ms




CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES.

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150

 

oC


Thermal resistance - junction to case

RQ (j-c)


0.012


 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


0.002


 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

 8000


10000


 

lb.

kN


Weight

W




Lb.

Kg.


* Superficies de montaje lisas, planas y engrasadas.

Nota: para el esquema de la caja y las dimensiones, vea el dibujo de la caja.

Power Control Thyristor 1500A for Phase Control




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