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YANGZHOU POSITIONING TECH CO., LTD.
Lista de Productos
Modelo: YZPST-R2619ZC21J
Marca: YZPST
productividad: 100
transporte: Ocean,Air
Lugar de origen: China
Capacidad de suministro: 500
Certificados : ISO9001-2008,ROHS
HS-Code: 85413000
Hafen: Shanghai
Tipo de Pago: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Plazo de entrega: 30 días
YZPST-R2619ZC21J
caracteristicas:
. Toda estructura difusa
. Configuración de compuerta amplificadora interdigitada
. Tiempo máximo garantizado de apagado
. Alta capacidad dV / dt
. Dispositivo ensamblado a presión
CARACTERÍSTICAS ELÉCTRICAS Y CLASIFICACIONES
Bloqueo - Estado de apagado
|
VRRM (1) |
VDRM (1) |
VRSM (1) |
|
2100 |
2100 |
2200 |
V RRM = voltaje reverso de pico repetitivo
V DRM = Voltaje pico de estado repetitivo
V RSM = Tensión inversa máxima no repetitiva (2)
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 200 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
200 V/msec |
Conduciendo - en estado
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV)M |
|
2619 |
|
A |
Sinewave,180o conduction,Tc=55oC |
|
RMS value of on-state current |
ITRMS |
|
5227 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
33.8
37.2 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
5.71x106 |
|
A2s |
8.3 msec |
|
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I =2.5 A |
|
Peak on-state voltage |
VTM |
|
2.3 |
|
V |
ITM = 4000 A |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
1500 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
- |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Gate voltage required to trigger all units
|
VGT |
|
3 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
Dinámica
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
tgd |
|
- |
0.8 |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
|
Turn-on time |
tgt |
|
- |
1.5 |
|
|
|
Turn-off time (with VR = -5 V) |
tq |
|
- |
50 |
ms |
ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
|
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/kW |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
|
Thermal resistamce - junction to sink |
RQ (c-s) |
|
11 22 |
|
K/kW |
Double sided cooled * Single sided cooled * |
|
Mounting force |
F |
27 |
47 |
- |
kN |
|
|
Weight |
W |
|
|
1.7 |
Kg |
about |
* Superficies de montaje lisas, planas y engrasadas
Nota: para el contorno y las dimensiones del caso, consulte el dibujo del esquema del caso en la última página de esta Información técnica
|
Sym |
A |
B |
C |
D |
H |
|
mm |
109 |
73 |
98 |
3.5×3 |
35±1 |
PRODUCTOS POR GRUPO : Dispositivos de disco semiconductor (tipo cápsula) > Tiristor de control de fase
Realizar consulta
Mr. John chang
Número de Teléfono:86-514-87782298
Fax:86-514-87782297
Móvil:+8613805278321
Email:info@yzpst.com
Dirección: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu
