Tiristores de control de fase directo DCR1278

Tipo de Pago:	L/C,T/T,Paypal
Incoterm:	FOB,CFR,CIF
Plazo de entrega:	30 días

Contactar ahora

Añadir al carrito Chatear Ahora

Descargar:

Información básica

Modelo: YZPST-DCR1278

Información adicional

Marca: YZPST

transporte: Ocean,Air

Lugar de origen: CHINA

Certificados : ISO9000

Hafen: SHANGHAI

DDescripción

Control de fase de tiristor de alta potencia

YZPST-DCR1278

Características: Alta capacidad dV / dt . Bloqueo de capacidad hasta 4200 voltios, configuración de la puerta de amplificación central, tiempo máximo garantizado de apagado, toda la estructura difusa

. Dispositivo ensamblado a presión

Direct Fast Control Thyristors DCR1278

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		1100		A	Sinewave,180^o conduction,T_c=65^oC
RMS value of on-state current	I_TRMS		2000		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		- 16.4		KA KA	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		1.35x10⁶		A²s	8.3 msec and 10.0 msec
Latching current	I_L		300		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		-		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		2.2		V	I_TM = 2900 A; Duty cPSTCle £ 0.01%; T_j = 25 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		-		A/ms	Switching from V_DRM£ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		100		A/ms	Switching from V_DRM£ 1000 V

CARACTERÍSTICAS ELÉCTRICAS Y CALIFICACIONES (cont`d)

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		-		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		-		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		- 400 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 4.0 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		-		V

Dinámica

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		-	-	ms	I_TM = 50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		-	-	ms	I_TM = 1000 A; di/dt = 25 A/ms; V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*		mC	I_TM = 1000 A; di/dt = 25 A/ms; V_R³ -50 V

* Para garantizado max. Valor, contacte con la fábrica.

CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES.

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		- -		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		- -		^oC/W	Double sided cooled * Single sided cooled *
Thermal resistamce - junction to sink	R_Q₍_j_-s)		0.024 -		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	20	24		kN
Weight	W			-	g