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YANGZHOU POSITIONING TECH CO., LTD.
Inicio> Lista de Productos> Dispositivos de disco de semiconductores (tipo de cápsula)> Control de fase tiristor> Conversor rápido KK 3 fase tiristor KK1000A 2000V
Conversor rápido KK 3 fase tiristor KK1000A 2000V
Conversor rápido KK 3 fase tiristor KK1000A 2000V
Conversor rápido KK 3 fase tiristor KK1000A 2000V

Conversor rápido KK 3 fase tiristor KK1000A 2000V

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Hafen:Shanghai
Atributos del producto

ModeloYZPST-KK1000A2000V

MarcaYZPST

Descripción

TIRISTORES DE CONTROL DE FASE

YZPST-KK1000A2000V



TIRISTORES DE CONTROL DE FASE

Este circuito de ajuste continuo de energía eléctrica típico se utiliza en muchos productos eléctricos en la vida diaria.



Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1000

 

A

Sinewave,180o conduction,Tc=80oC

RMS value of on-state current

ITRMS

 

1570

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

-

 

18500

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.66x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

-

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

-

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

1.45

 

V

ITM = 1000 A; Duty Cycle £ 0.01%; Tj =1 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

 

800

 

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

200

 

A/ms

Switching from VDRM£ 1000 V


CARACTERÍSTICAS ELÉCTRICAS Y CLASIFICACIONES


Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

100

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

-

120

-

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

-

3.0

-

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;Tj = + 125 oC

Peak negative voltage

VGRM

 

20

 

V

 


Dinámica

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

-

0.7

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

-

50

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V

* Para un máximo garantizado valor, póngase en contacto con la fábrica.


CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+125

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.023

-

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

0.0075

-

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

22.2

26.6

 

kN

 

Weight

W

 

 

-

g

About

* Superficies de montaje lisas, planas y engrasadas



TIRISTOR DE ALTA POTENCIA PARA APLICACIONES DE CONTROL DE FASE


KK1000A2000V C712L

Caracteristicas: . Toda estructura difusa. Configuración de compuerta amplificadora central. Capacidad de bloqueo hasta 2100 voltios

. Tiempo máximo garantizado de apagado. Alta capacidad dV / dt. Dispositivo ensamblado a presión




Fast kk Thyristor KK1000A2000V

Fast kk Thyristor KK1000A2000VFast kk Thyristor KK1000A2000V


CASE OUTLINE AND DIMENSIONS


Fast kk Thyristor KK1000A2000V

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