Tiristor KP800A 1800v
Obtener el último precioTipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Tipo de Pago: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
Hafen: | Shanghai |
Modelo: YZPST-KP800A 1800V
Marca: YZPST
Tiristor de control de fase
YZPST-KP800A1800V
Phase Control Thyristor 1900V es ampliamente utilizado en todo tipo de equipos electrónicos y productos electrónicos. Se utiliza para el rectificador controlado, el inversor, la conversión de frecuencia, la regulación de voltaje y el interruptor sin contacto. Aparatos eléctricos domésticos con luz de regulación, ventilador de velocidad, aire acondicionado, televisores, refrigeradores, lavadoras, cámaras, circuitos combinados de sonido, luz y sonido. El controlador de tiempo, el dispositivo de juguete, el control remoto inalámbrico, la cámara y el dispositivo de tiristor se utilizan ampliamente en el control industrial, etc.
Thyristor |
Ratings |
||||||
Symbol |
Definition |
Conditions |
|
min. |
typ. |
max. |
Unit |
V EQ \F(RSM,DSM) |
max. non-repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
1900 |
V |
|
V EQ \F(RRM,DRM) |
max. repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
1800 |
V |
|
VT |
On-state voltage |
IT=1500 A |
TJ = 25°C |
|
|
1.70 |
V |
IT(AV) |
average forward current |
TC=25°C |
|
|
|
800 |
A |
IT(RMS) |
RMS forward current |
180° sine |
|
|
|
2214 |
A |
RthJC |
thermal resistance junction to case |
|
|
|
|
|
K/W |
RthCH |
thermal resistance case to heatsink |
|
|
|
|
|
K/W |
RthJK |
thermal resistance junction to heatsink |
|
|
|
|
0.032 |
K/W |
ITSM |
max. forward surge current |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
12.7 |
kA |
I²t |
value for fusing |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
806 |
kA²s |
di/dt |
Rate of rise of on-state current |
TJ = 125°C; f = 50 Hz tP=200µs;diG/dt=0.15A/µs; IG=0.15A;VD= ⅔VDRM |
repetitive |
|
|
500 |
A/µs |
non-repet |
|
|
1000 |
A/µs |
|||
dv/dt |
Maximum linear rate of rise of off-state voltage |
VD= ⅔VDRM RGK =∞; method 1 (linear voltage rise) |
TJ = 125°C |
|
|
1000 |
V/µs |
VGT |
gate trigger voltage |
VD = 6V |
TJ = 25°C |
|
|
3.0 |
V |
IGT |
gate trigger current |
VD = 6V |
TJ = 25°C |
|
|
300 |
mA |
IL |
latching current |
|
TJ = 25°C |
|
|
|
A |
IH |
holding current |
|
TJ = 25°C |
|
|
500 |
mA |
tgd |
gate controlled delay time |
|
TJ = 25°C |
|
|
2.5 |
µs |
tq |
Turn-off time |
VR=10 V; IT=20A; VD=⅔VDRM |
TJ = 150°C |
|
200 |
400 |
µs |
Tstg |
storage temperature |
|
|
-40 |
|
125 |
°C |
TJ |
virtual junction temperature |
|
|
-40 |
|
125 |
°C |
Wt |
Weight |
|
|
|
|
|
g |
F |
mounting force |
|
|
10 |
|
20 |
kN |
Dibujo de esquema
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.