Tiristor inversor de alta potencia C458PB

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Información básica

Modelo: YZPST-C458PB

Información adicional

Paquete: 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico

productividad: 100

Marca: YZPST

transporte: Ocean,Air

Lugar de origen: China

Capacidad de suministro: 1000

Certificados : ISO9000

HS-Code: 85413000

Hafen: SHANGHAI

DDescripción

TIRISTOR DE ALTA POTENCIA PARA APLICACIONES CON INVERSOR Y CHOPPER

YZPST- C458PB

caracteristicas:

. Toda la estructura difusa

. Configuración de puerta de amplificación interdigitada

. Tiempo máximo de apagado garantizado

. Alta capacidad dV / dt

. Dispositivo ensamblado a presión

CARACTERÍSTICAS ELÉCTRICAS Y CALIFICACIONES.

Bloqueo - Estado apagado

Device Type	VRRM (1)	VDRM (1)	VRSM (1)
C458PB	1200	1200	1300

V _RRM = Voltaje de reversa pico repetitivo

V _DRM = Voltaje de estado de apagado pico repetitivo

V _RSM = Voltaje máximo inverso no repetitivo (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

10 mA

35 mA (3)

Critical rate of voltage rise

dV/dt (4)

600V/msec

Conduciendo - en estado

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		1200		A	T_c=85^oC
RMS value of on-state current	I_TRMS		1570		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		18400 16900		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		1.66x10⁶		A²s	8.3 msec and 10.0 msec
Latching current	I_L		1000		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		500		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		2.60		V	I_TM =3000 A; Duty cPSTCle £ 0.01%
Critical rate of rise of on-state current (5, 6)	di/dt		600		A/ms	Switching from V_DRM £ 1000 V, non-repetitive

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		10		A
Gate current required to trigger all units	I_GT		300 150 125		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.30	5 3		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dinámica

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.5	0.7	ms	I_TM = 500 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		19		ms	I_TM = 1000 A; di/dt = 25 A/ms; V_R ³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*	2000	mC	I_TM = 1000 A; di/dt = 25 A/ms; V_R ³ -50 V

* Para garantizado max. Valor, contacte con la fábrica.

CARACTERÍSTICAS TÉRMICAS Y MECÁNICAS Y CALIFICACIONES.

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_{Q (j-c)}		0.023 0.046		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_{Q (j-c)}		0.010 0.020		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	19.5	21		kN