YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Inicio> Lista de Productos> Paquete de plástico semiconductor> BI DIRECCIONES Tiristor (Triac)> SG50AA80 bidireccional scr triac 800V
SG50AA80 bidireccional scr triac 800V
SG50AA80 bidireccional scr triac 800V
SG50AA80 bidireccional scr triac 800V
SG50AA80 bidireccional scr triac 800V
SG50AA80 bidireccional scr triac 800V

SG50AA80 bidireccional scr triac 800V

$5.92-999 Piece/Pieces

$4.5≥1000Piece/Pieces

Tipo de Pago:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Cantidad de pedido mínima:1000 Piece/Pieces
transporte:Ocean,Air
Hafen:Shanghai
Atributos del producto

ModeloYZPST-SG50AA80

MarcaYZPST

Embalaje y entrega
Unidades de venta : Piece/Pieces
Tipo de paquete : 1. Embalaje anti-electrostático 2. Caja de cartón 3. Embalaje protector de plástico
Descripción

Triac YZPST-SG50AA80

SG50AA80 bidireccional scr triac 800V

TRIAC (TIPO AISLADO)

Los SG50AA son triacs moldeados aislados adecuados para una amplia gama de aplicaciones como copiadora, horno microondas, interruptor de estado sólido, control de motor, control de luz y control de calentador.

● IT (AV) 50A

● Alta capacidad de sobretensión 330A

● Terminales de pestaña

Triac SG50AA (2)Triac SG50AA (1)


 

Symbol

Item

 

 

 

Unit

SG50AA80

SG50AA120

SG50AA160

VDRM

Repetitive Peak Off-State Voltage

800

1200

1600

V

Symbol

Item

Conditions

Ratings

Unit

IT(RMS)

R.M.S. On-State Current

Tc=58

50

A

ITSM

Surge On-State Current

One cycle, 50Hz/60Hz, peak, non-repetitive

450

A

I2t

I2t

Value for one cycle of surge current

730

A2S

 

PGM

 

Peak Gate Power Dissipation

 

 

10

 

W

PG(AV)

Average Gate Power Dissipation

 

1

W

IGM

Peak Gate Current

 

3

A

VGM

Peak Gate Voltage

 

10

V

di/dt

Critical Rate of Rise of On-State Current

IG=100mA,Tj=25,VD=1/2VDRM,

100

A/μs

Tj

Operating Junction Temperature

 

-25 to +125

Tstg

Storage Temperature

 

-40 to +125

 

Mounting Torque(M4)

Recommended Value 1.0-1.4(10-14)

1.5(15)

N.m

 

Mass

Typical value

2

g

Un l eléctrico C h ara c t e ticas

 

Symbol

 

Item

 

Conditions

 

Ratings

 

Unit

IDRM

Reptitive  Peak  Off-State  Current,

 

max

 

VD=VDRM, Single phase, half wave, Tj=125

5

mA

VTM

Peak On-State Voltage, max

On-State Current [ 2 × IT ( RMS )], Inst.

 

measurement

1.4

V

I + GT1

1

 

Gate Trigger Current, max

Tj=25,IT=1A,VD=6V

80

 

mA

I -GT1

2

Tj=25,IT=1A,VD=6V

80

I + GT3

3

 

-

I -GT3

4

Tj=25,IT=1A,VD=6V

80

V+ GT1

1

 

Gate Trigger Voltage, max

Tj=25,IT=1A,VD=6V

3

 

V

V-GT1

2

Tj=25,IT=1A,VD=6V

3

V+ GT3

3

 

-

V-GT3

4

Tj=25,IT=1A,VD=6V

3

VGD

Non-Trigger Gate Voltage, min

Tj=125,VD=1/2VDRM

0.2

V

tgt

Turn On Time, max.

IT(RMS),IG=100mA,VD=1/2VDRM,Tj

=25,dIG/dt=1A/μs

10

V

dv/dt

Critical   Rate   of   Rise   on-State

 

Voltage,min.

 

Tj=125,VD=2/3VDRM,Exoponential wave.

300

 

V/μs

 

dv/dt]c

Critical   Rate   of   Rise   off-State

 

Voltage at commutation, min

 

Tj=125,VD=2/3VDRM,[di/dt]c=15A/ms

200

 

V/μs

IH

Holding Current, typ.

Tj=25

30

mA

Rth(j-c)

Thermal Impedance, max

Junction to case

1.5

/W


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